Abstract: The invention comprises an assembly or apparatus for removing metal ions from an aqueous stream of metals by an electrolytic process. The apparatus comprises an electrochemical-cell assembly having at least one knit-mesh metal cathode porous to an aqueous stream of metal ions and at least one anode. The metal-mesh cathode may be of the same metal as one of the metals in the aqueous stream. By electrodeposition, at least one metal ion from the stream is precipitated onto the metal-mesh cathode in the cell assembly.

Abstract: It is desirable to implement complementary field effect transistors in group III/group V compound semiconductors, especially on InP substrates. Outstanding n-channel performance has been demonstrated in InGaAs channel devices on InP substrates. Preliminary experiments indicate that GaAsSb channel devices will result in optimal p-heterostructure FETs (HFETs). This disclosure teaches a technique to fabricate both n- and p-channel devices on the same substrate, allowing the demonstration of (C-HFET) technology. The HFET structure contains a channel region and the barrier region. The channel region consists of two distinctive parts: the p-channel and the n-channel areas. The p-channel area consists of GaAsSb, lattice matched to the InP substrate. In n-channel FETs, and ohmic contacts are formed by first doping the contact areas with Si by ion implantation, annealing the structure and then depositing and annealing the ohmic metal.