Abstract: The invention comprises an assembly or apparatus for removing metal ions from an aqueous stream of metals by an electrolytic process. The apparatus comprises an electrochemical-cell assembly having at least one knit-mesh metal cathode porous to an aqueous stream of metal ions and at least one anode. The metal-mesh cathode may be of the same metal as one of the metals in the aqueous stream. By electrodeposition, at least one metal ion from the stream is precipitated onto the metal-mesh cathode in the cell assembly.

Abstract: Disclosed is a method of recovering metal from waste plating stream and using the recovered metal comprising: providing a waste metal plating stream containing metal ions in an aqueous solution; passing the waste metal plating stream containing the metal ions into an electrochemical cell assembly having an inlet for the waste metal plating stream, a plurality of alternating anodes and cathodes porous to the waste metal solution and an exit from the cell; passing the waste metal plating stream through pores of the cathode; passing an electrical current through the anodes and cathodes, thereby depositing a portion of the metal ions onto the cathodes and reducing the amount of the metal ion in the solution from that in the introduced waste metal plating stream; recovering the deposited metal from the cathode; and using the recovered deposited metal as a source of soluble metallic anode to be deposited on to a substrate in a subsequent metal plating process.

Abstract: It is desirable to implement complementary field effect transistors in group III/group V compound semiconductors, especially on InP substrates. Outstanding n-channel performance has been demonstrated in InGaAs channel devices on InP substrates. Preliminary experiments indicate that GaAsSb channel devices will result in optimal p-heterostructure FETs (HFETs). This disclosure teaches a technique to fabricate both n- and p-channel devices on the same substrate, allowing the demonstration of (C-HFET) technology. The HFET structure contains a channel region and the barrier region. The channel region consists of two distinctive parts: the p-channel and the n-channel areas. The p-channel area consists of GaAsSb, lattice matched to the InP substrate. In n-channel FETs, and ohmic contacts are formed by first doping the contact areas with Si by ion implantation, annealing the structure and then depositing and annealing the ohmic metal.

Abstract: Sulfur dioxide is scrubbed from boiler flue gases in a double-loop alkali scrubber, one a quencher loop and the other an absorption loop. The reagent flow of the two loops is isolated so that none of the reagent from the quencher loop is cycled to the absorber loop and a portion of the make-up water for the quencher loop is received from the absorber loop. By controlling recycled water from a dewatering system and selective utilization of high and low solids streams from the absorber system, the quencher slurry concentration may be controlled and the requirement for new make-up water reduced. The two loop process isolates the main absorber system including the demisters, which are prone to scaling and corrosion, from the evaporative quencher portion of the process. All the recycled water is returned to the evaporative quencher loop and none to the loop controlling the demisters and the primary absorber sections. However, under varying SO.sub.