Abstract: A method involving: providing an optical waveguide made of a semiconductor material and having a region that is doped by a deep level impurity which creates deep level states in a bandgap in the semiconductor material, the deep level states characterized by an occupancy; passing an optical signal through the optical waveguide and between the region doped by the deep level impurity; and modulating the occupancy of the deep level states to thereby modulate the optical signal.

Abstract: A method involving: providing an optical waveguide made of a semiconductor material and having a region that is doped by a deep level impurity which creates deep level states in a bandgap in the semiconductor material, the deep level states characterized by an occupancy; passing an optical signal through the optical waveguide and between the region doped by the deep level impurity; and modulating the occupancy of the deep level states to thereby modulate the optical signal.

Abstract: The present invention provides a simple design for a temperature-insensitive extrinsic polarimetric strain sensor. The sensing element is a thin sheet of photoelastic material that is bonded to the test object. It is illuminated with linearly polarized light with the polarization direction at 45 degrees relative to the strain-induced fast and slow axes in the photoelastic material. The sensor measures the difference between the strains along these two orthogonal directions. The reduced sensitivity of the sensor to temperature results from the fact that the illumination is perpendicular to the surface of the test object. All polarization components that are parallel to the surface will experience identical refractive index changes due to thermal effects. Consequently, a measurement of the difference in strains along two directions in the surface plane is insensitive to temperature.

Abstract: The present invention provides a simple design for a temperature-insensitive extrinsic polarimetric strain sensor. The sensing element is a thin sheet of photoelastic material that is bonded to the test object. It is illuminated with linearly polarized light with the polarization direction at 45 degrees relative to the strain-induced fast and slow axes in the photoelastic material. The sensor measures the difference between the strains along these two orthogonal directions. The reduced sensitivity of the sensor to temperature results from the fact that the illumination is perpendicular to the surface of the test object. All polarization components that are parallel to the surface will experience identical refractive index changes due to thermal effects. Consequently, a measurement of the difference in strains along two directions in the surface plane is insensitive to temperature.

Abstract: The present invention provides a simple design for a temperature-insensitive extrinsic polarimetric strain sensor. The sensing element is a thin sheet of photoelastic material that is bonded to the test object. It is illuminated with linearly polarized light with the polarization direction at 45 degrees relative to the strain-induced fast and slow axes in the photoelastic material. The sensor measures the difference between the strains along these two orthogonal directions. The reduced sensitivity of the sensor to temperature results from the fact that the illumination is perpendicular to the surface of the test object. All polarization components that are parallel to the surface will experience identical refractive index changes due to thermal effects. Consequently, a measurement of the difference in strains along two directions in the surface plane is insensitive to temperature.