Abstract: A MEMS switch fabrication process and apparatus inclusive of a bulbous rounded surface movable contact assembly that is integral with the switch movable element and achieving of long contact wear life with low contact electrical resistance. The disclosed process is compatible with semiconductor integrated circuit fabrication materials and procedures and includes an unusual photoresist reflow step in which the bulbous contact shape is quickly defined in three dimensions from more easily achieved integrated circuit mask and etching-defined precursor shapes. A plurality of differing photoresist materials are used in the process. A large part of the contact and contact spring formation used in the invention is accomplished with low temperature processing including electroplating. Alternate processing steps achieving an alloy metal contact structure are included. Use of a subroutine of processing steps to achieve differing but related portions of the electrical contact structure is also included.

Abstract: A digitally controlled optical delay apparatus providing optical signal delays electrically selectable in the picosecond to nanosecond range by way of selectable signal path lengths. Path lengths are incremented in physical length and path delay time according to digital ratios. The delay element includes micro-miniature path changing mirrors controlled in path length selecting positioning by input signals of logic level magnitude. Fiber optic coupling of signals to and from the delay element and a combination of fixed position and movable mirror included optical signal path lengths are included.

Abstract: A MEMS switch fabrication process and apparatus inclusive of a bulbous rounded surface movable contact assembly that is integral with the switch movable element and achieving of long contact wear life with low contact electrical resistance. The disclosed process is compatible with semiconductor integrated circuit fabrication materials and procedures and includes an unusual photoresist reflow step in which the bulbous contact shape is quickly defined in three dimensions from more easily achieved integrated circuit mask and etching-defined precursor shapes. A plurality of differing photoresist materials are used in the process. A large part of the contact and contact spring formation used in the invention is accomplished with low temperature processing including electroplating. Alternate processing steps achieving an alloy metal contact structure are included. Use of a subroutine of processing steps to achieve differing but related portions of the electrical contact structure is also included.

Abstract: A method for selecting metal alloys as the electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This method includes a review of alloy experience, consideration of equilibrium binary alloy phase diagrams, obtaining thin film material properties and, based on a suitable model, predicting contact electrical resistance performance. After determination of a candidate alloy material, MEMS switches are conceptualized, fabricated and tested to validate the alloy selection methodology. Minimum average contact resistance values of 1.17 and 1.87 ohms are achieved for micro-switches with gold (Au) and gold-platinum (Au-(6.3 at %)Pt) alloy contacts. In addition, ‘hot-switched’ life cycle test results of 1.02×108 and 2.70×108 cycles may be realized for micro-switches with Au and Au-(6.3 at %)Pt contacts. These results indicate increased wear with a small increase in contact resistance for MEMS switches with metal alloy electric contacts.