Abstract: Embodiments of the present invention include techniques for regulating discharge of a capacitor. In one embodiment, the circuit may be used to store power on a capacitor and regulate the discharge of the capacitor to power a load, such as system electronics, circuitry, or electronic devices. In one embodiment, a first capacitor is charged from a power source and stores energy for powering an electronic device. A second capacitor is coupled to the electronic device for providing power to the electronic device. Switched capacitors are configured to transfer charge from the first capacitor to the second capacitor. A control circuit controls switching of the switched capacitors in response to voltage on the first capacitor. The switching frequency may be increased as the voltage on the first capacitor decreases so that a steady flow of charge is provided across all capacitor voltage levels.

Abstract: Clock generation circuitry is arranged in stages so as to convert a slow slew rate input signal into a high slew rate clock signal in a low power environment. Each stage includes a capacitor and an inverter, both fed by respective current mirrors. The capacitor is trickle-charged through its current mirror, and charge of the capacitor is dumped onto an output of the stage at a controlled timing. Two or more such stages may be provided, so as to improve the slew rate of both of the leading and trailing edges of the clock signal, and also so as to provide a convenient source of timing for dumping charge of each capacitor. Each stage might also include a diode switchably connected across the capacitor, so as to discharge the capacitor at appropriate timings, to reduce interference on succeeding stages that might otherwise be caused by residual charge on the capacitor.

Abstract: Embodiments of the invention provide an image display mode for displays, such as a television, that do not use the entire display field for displaying an image. A user selectable modification of the image display is provided, where the image may be stepped a predefined column of pixels, or predefined row of pixels, depending on viewing format, at a time at a very slow rate. The image may be stepped a predefined column of pixels per predefined time period until it is entirely to one side of the display, at which point it may be slowly stepped back to the other side of the display.

Abstract: A system, apparatus, and method to connect an oscillator network to multiple parallel oscillator circuits. The apparatus may include multiple modules located within a platform, where each of the multiple modules includes an internal oscillator circuit and the platform includes an input port; and an oscillator network located external to the platform. The oscillator network is coupled to each of said internal oscillator circuits through the input port. Other embodiments are described and claimed.

Abstract: An oscillator circuit may be operated in a high power mode or a reduced power mode. The high power mode provides fast start-up of the oscillator circuit.

Abstract: Briefly, in accordance with embodiments of the invention, switched capacitors may be utilized to emulate resistors in a longer time constant feedback network for amplitude regulation of a crystal oscillator.

Abstract: Briefly, in accordance with embodiments of the invention, switched capacitors may be utilized to emulate resistors in a longer time constant feedback network for amplitude regulation of a crystal oscillator.

Abstract: A power delivery apparatus, system may include a series-connected plurality of energy storage devices, a voltage sensor to sense a supply voltage across a load coupled to a selected one of the plurality of storage devices, and a switch to couple and decouple various ones of the series-connected plurality of energy storage devices from the load when the supply voltage is less than or equal to a reference voltage. An article, including a machine-accessible medium, capable of directing a machine to carry out a method of delivering power may include data which directs the machine to couple each one of a series-connected plurality of energy storage elements to a power source, couple a selected one of the plurality of storage elements to a load, discharge a selected amount of energy from the selected one of the series-connected plurality of storage elements into the load, and decouple the selected one of the series-connected plurality of storage elements from the load.

Abstract: A power delivery apparatus, system may include a series-connected plurality of energy storage devices, a voltage sensor to sense a supply voltage across a load coupled to a selected one of the plurality of storage devices, and a switch to couple and decouple various ones of the series-connected plurality of energy storage devices from the load when the supply voltage is less than or equal to a reference voltage. An article, including a machine-accessible medium, capable of directing a machine to carry out a method of delivering power may include data which directs the machine to couple each one of a series-connected plurality of energy storage elements to a power source, couple a selected one of the plurality of storage elements to a load, discharge a selected amount of energy from the selected one of the series-connected plurality of storage elements into the load, and decouple the selected one of the series-connected plurality of storage elements from the load.

Abstract: A micro-machined accelerometer includes a moveable metal plate, mounted upon a semiconductor substrate. The moveable metal plate includes an aperture which contains a pedestal and at least one torsion bar for connecting the pedestal to the moveable metal plate. Measurement electrodes formed on the semiconductor substrate combine with the metal plate to form measurement capacitors. A combined self-test/common electrode provides a dual function of a common electrode during operation of the accelerometer and a testing electrode during a self-test procedure.

Abstract: Described is a method of manufacturing a silicious micro-valve comprising the steps of providing a first silicious substrate; removing a portion of the first substrate to reveal the 111 planes of the first substrate; drawing an epitaxial layer to conform to the 111 planes of the first substrate; and assembling the first substrate and the epitaxial layer as two separate identical pieces to form a micro-valve having 111 planes.

Abstract: A micro soldering apparatus and method comprising a system (10) for attaching an electronic component (12) to a substrate (14). The system (10) comprises a soldering tool (16) including a dispensing orifice assembly (18) for pulsatingly dispensing a controlled quantity of molten solder (19) to a component (12) and substrate (14) so that the component is joined to the substrate (14) mechanically and electrically upon solidification of the molten solder (19). There is no physical contact between the dispensing orifice assembly (18) and joint. The system (10) also includes a controller for the soldering tool (16). The controller functions in response to process control parameters so that the controlled quantity of molten solder (19) is dispensed through a non-oxidizing atmosphere by a pressure pulse applied to the molten solder.

Abstract: Described is a microvalve comprised of a movable spool and/or seat comprising a silicious spool having three planes, e.g. three planes aligned with all of the spool's planes, and a silicious seat conforming to the spool's planes. The spool and/or the seat may move to open or close the valve.

Abstract: A flow sensor which includes a support structure including a base having a plurality of spaced mesas on a surface thereof is provided. A low thermal conductivity, dielectric diaphragm spanning the mesas is supported along its length thereby and forms an electrical and thermal insulation barrier over the support structure and the mesas. At least one flow sensing element is superposed on the diaphragm so that the flow sensing element is substantially electrically and thermally isolated from the support structure. A method for fabricating the flow sensor is also provided.

Abstract: A monolithic pressure sensitive silicon integrated circuit is formed by first providing a localized etch-stop layer on one surface of the silicon chip, then growing successive epitaxial layers of opposite conductivity types over this surface. In the upper of the two layers, there is formed a bridge of four piezoresistors overlying the periphery of the etch-stop layer and the conditioning circuitry for amplifying the output of the bridge including both lateral and vertical junction transistors. The back surface of the chip is etched anisotropically to form a cavity that leaves a thin diaphragm underlying the bridge of the four piezoresistors.

Abstract: A monolithic pressure sensitive silicon integrated circuit is formed by first providing a localized etch-stop layer on one surface of the silicon chip, then growing successive epitaxial layers of opposite conductivity types over this surface. In the upper of the two layers, there is formed a bridge of four piezoresistors overlying the periphery of the etch-stop layer and the conditioning circuitry for amplifying the output of the bridge including both lateral and vertical junction transistors. The back surface of the chip is etched anisotropically to form a cavity that leaves a thin diaphragm underlying the bridge of the four piezoresistors.

Abstract: A process for forming CMOS devices uses outdiffusion of implanted ions in a patterned refractory silicidable layer to form the source/drain regions of the device. Moreover, the oxidation of the sidewalls of openings formed in the layer serves to isolate the layer from the polysilicon gate electrode which is later formed in the openings in this layer.

Abstract: A piezoresistive pressure transducer is formed in a silicon layer which has been grown over a monocrystalline silicon substrate, a central portion of which had been earlier coated with a silicon dioxide layer having a plurality of apertures under each of which had been formed a heavily doped etch resistant region. The silicon layer is grown epitaxially over the apertures to be monocrystalline but grows as polycrystalline material over the silicon dioxide. Then the silicon substrate is etched to remove its central portion under the silicon dioxide and the heavily doped regions, leaving a thick surrounding portion for support. Resistors are formed in the monocrystalline portions of the grown layer overlying the heavily doped regions.