Patents by Inventor Paul E. Whittier, Jr.

Paul E. Whittier, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compensation doping of group III-V materials
    Patent number: 4689094
    Abstract: A method of growing an epitaxial doped chromium buffer layer is described. A first flow of arsenic trichloride and hydrogen is directed through a retort having disposed therein at an elevated temperature chromium and gallium arsenide crystals. The arsenic trichloride reacts with the chromium and the gallium arsenic crystals to produce chromium chloride, gallium chloride and arsenic. This vapor stream is then directed into a reactor tube where a second flow of gallium chloride and arsenic is provided. Deposited from these flows is gallium arsenide doped with chromium.
    Type: Grant
    Filed: December 24, 1985
    Date of Patent: August 25, 1987
    Assignee: Raytheon Company
    Inventors: H. Barteld Van Rees, Paul E. Whittier, Jr.