Patents by Inventor Paul Eide
Paul Eide has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8759803Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: GrantFiled: January 16, 2014Date of Patent: June 24, 2014Assignee: GTAT CorporationInventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, Jr., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Publication number: 20140130741Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: ApplicationFiled: January 16, 2014Publication date: May 15, 2014Applicant: GTAT CORPORATIONInventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, JR., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Patent number: 8723452Abstract: A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.Type: GrantFiled: July 20, 2011Date of Patent: May 13, 2014Assignee: GTAT CorporationInventors: Geoffrey Ryding, Steven Richards, Paul Eide, Theodore H. Smick, Malcolm Barnett
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Patent number: 8633458Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: GrantFiled: November 15, 2011Date of Patent: January 21, 2014Assignee: GTAT CorporationInventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, Jr., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Publication number: 20130119263Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: ApplicationFiled: November 15, 2011Publication date: May 16, 2013Applicant: Twin Creeks Technologies, Inc.Inventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, JR., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Patent number: 8426829Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.Type: GrantFiled: September 30, 2010Date of Patent: April 23, 2013Assignee: GTAT CorporationInventors: William H Leavitt, Theodore H Smick, Joseph Daniel Gillespie, William H Park, Paul Eide, Drew Arnold, Geoffrey Ryding
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Publication number: 20130056655Abstract: An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.Type: ApplicationFiled: September 7, 2011Publication date: March 7, 2013Applicant: TWIN CREEKS TECHNOLOGIES, INC.Inventors: Theodore Smick, Geoffrey Ryding, Takao Sakase, William Park, JR., Joseph Gillespie, Ronald Horner, Paul Eide
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Patent number: 8378317Abstract: An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.Type: GrantFiled: September 7, 2011Date of Patent: February 19, 2013Assignee: GTAT CorporationInventors: Theodore Smick, Geoffrey Ryding, Takao Sakase, William Park, Jr., Joseph Gillespie, Ronald Horner, Paul Eide
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Patent number: 8227768Abstract: An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.Type: GrantFiled: June 18, 2009Date of Patent: July 24, 2012Assignee: Axcelis Technologies, Inc.Inventors: Theodore Smick, Geoffrey Ryding, Ronald F. Horner, Paul Eide, Marvin Farley, Kan Ota
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Publication number: 20120146555Abstract: A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.Type: ApplicationFiled: July 20, 2011Publication date: June 14, 2012Applicant: TWIN CREEKS TECHNOLOGIES, INC.Inventors: Geoffrey Ryding, Steven Richards, Paul Eide, Theodore H. Smick, Malcolm Barnett
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Patent number: 8168941Abstract: An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.Type: GrantFiled: January 22, 2009Date of Patent: May 1, 2012Assignee: Axcelis Technologies, Inc.Inventors: Marvin Farley, Donald Polner, Geoffrey Ryding, Theodore Smick, Takao Sakase, Ronald Horner, Edward Eisner, Paul Eide, Brian Freer, Mark Lambert, Donovan Beckel
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Publication number: 20110073781Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.Type: ApplicationFiled: September 30, 2010Publication date: March 31, 2011Applicant: TWIN CREEKS TECHNOLOGIES, INC.Inventors: William H. Leavitt, Theodore H. Smick, Joseph Daniel Gillespie, William H. Park, Paul Eide, Drew Arnold, Geoffrey Ryding
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Publication number: 20100181470Abstract: An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.Type: ApplicationFiled: January 22, 2009Publication date: July 22, 2010Applicant: Axcelis Technologies, Inc.Inventors: Marvin Farley, Donald Polner, Geoffrey Ryding, Theodore Smick, Takao Sakase, Ronald Horner, Edward Eisner, Paul Eide, Brian Freer, Mark Lambert, Donovan Beckel
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Publication number: 20090321631Abstract: An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.Type: ApplicationFiled: June 18, 2009Publication date: December 31, 2009Applicant: Axcelis Technologies, Inc.Inventors: Theodore Smick, Geoffrey Ryding, Ronald F. Horner, Paul Eide, Marvin Farley, Kan Ota