Patents by Inventor Paul F. Baude

Paul F. Baude has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective etch for II-VI semiconductors
    Patent number: 6058123
    Abstract: A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.
    Type: Grant
    Filed: September 9, 1997
    Date of Patent: May 2, 2000
    Assignee: 3M Innovative Properties Company
    Inventors: Michael A. Haase, Paul F. Baude, Thomas J. Miller
  • Light absorbing layer for II-VI semiconductor light emitting devices
    Patent number: 5963573
    Abstract: A II-VI semiconductor light emitting device includes a II-VI semiconductor light emitting region and a II-VI semiconductor waveguide layer. A light absorbing layer is provided near the II-VI semiconductor waveguide layer, outside of the active region. The light absorbing layer absorbs extraneous radiation thereby reducing dark line defects (DLDs).
    Type: Grant
    Filed: August 25, 1997
    Date of Patent: October 5, 1999
    Assignee: 3M Innovative Properties Company
    Inventors: Michael A. Haase, Paul F. Baude
  • Selective etch method for II-VI semiconductors
    Patent number: 5834330
    Abstract: A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.
    Type: Grant
    Filed: October 7, 1996
    Date of Patent: November 10, 1998
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Michael A. Haase, Paul F. Baude, Thomas J. Miller
  • Be-containing II-VI blue-green laser diodes
    Patent number: 5818859
    Abstract: A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be.
    Type: Grant
    Filed: October 7, 1996
    Date of Patent: October 6, 1998
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Thomas J. Miller, Michael A. Haase, Paul F. Baude, Michael D. Pashley