Abstract: The present invention relates to devices and methods for coating microprojection or microneedle arrays including arrays that contain vaccine formulations, more specifically to multivalent vaccine formulations where components of the multivalent vaccine might be incompatible.

Abstract: A memory system may include a memory controller suitable for transmitting write data and a first write ECC corresponding to the write data during a write operation, a first error correction circuit suitable for detecting whether the write data received from the memory controller has an error, using the first write ECC received from the memory controller, and correcting the error when the error is detected, a second ECC generation circuit suitable for generating a second write ECC using the write data received from the memory controller, and generating the second write ECC using the write data whose error has been corrected by the first error correction circuit, when the detection of the error is noticed from the first error correction circuit, and one or more memories suitable for storing the second write ECC and write data corresponding to the second write ECC.

Abstract: A memory includes a plurality of rows, each of which is coupled to a plurality of memory cells; a target row determining circuit suitable for determining a row that is likely to lose data among the plurality of rows as a target row; and a transfer circuit suitable for transferring, when a number of target rows determined by the target row determining circuit is equal to or greater than a threshold value, information representing that the number of target rows reaches the threshold value to a memory controller.

Abstract: A memory system may include a memory controller suitable for transmitting write data and a first write ECC corresponding to the write data during a write operation, a first error correction circuit suitable for detecting whether the write data received from the memory controller has an error, using the first write ECC received from the memory controller, and correcting the error when the error is detected, a second ECC generation circuit suitable for generating a second write ECC using the write data received from the memory controller, and generating the second write ECC using the write data whose error has been corrected by the first error correction circuit, when the detection of the error is noticed from the first error correction circuit, and one or more memories suitable for storing the second write ECC and write data corresponding to the second write ECC.

Abstract: A memory system may include a memory controller suitable for transmitting write data and a first write ECC corresponding to the write data during a write operation, a first error correction circuit suitable for detecting whether the write data received from the memory controller has an error, using the first write ECC received from the memory controller, and correcting the error when the error is detected, a second ECC generation circuit suitable for generating a second write ECC using the write data received from the memory controller, and generating the second write ECC using the write data whose error has been corrected by the first error correction circuit, when the detection of the error is noticed from the first error correction circuit, and one or more memories suitable for storing the second write ECC and write data corresponding to the second write ECC.

Abstract: A memory includes a plurality of rows, each of which is coupled to a plurality of memory cells; a target row determining circuit suitable for determining a row that is likely to lose data among the plurality of rows as a target row; and a transfer circuit suitable for transferring, when a number of target rows determined by the target row determining circuit is equal to or greater than a threshold value, information representing that the number of target rows reaches the threshold value to a memory controller.

Abstract: A memory system may include a memory controller suitable for transmitting write data and a first write ECC corresponding to the write data during a write operation, a first error correction circuit suitable for detecting whether the write data received from the memory controller has an error, using the first write ECC received from the memory controller, and correcting the error when the error is detected, a second ECC generation circuit suitable for generating a second write ECC using the write data received from the memory controller, and generating the second write ECC using the write data whose error has been corrected by the first error correction circuit, when the detection of the error is noticed from the first error correction circuit, and one or more memories suitable for storing the second write ECC and write data corresponding to the second write ECC.

Abstract: The present invention relates to devices and methods for coating microprojection or microneedle arrays including arrays that contain vaccine formulations, more specifically to multivalent vaccine formulations where components of the multivalent vaccine might be incompatible.

Abstract: Memory operations using system thermal sensor data. An embodiment of a memory device includes a memory stack including one or more coupled memory elements, and a logic chip coupled with the memory stack, the logic chip including a memory controller and one or more thermal sensors, where the one or more thermal sensors include a first thermal sensor located in a first area of the logic chip. The memory controller obtains thermal values of the one or more thermal sensors, where the logic element is to estimate thermal conditions for the memory stack using the thermal values, the determination of the estimated thermal conditions for the memory stack being based at least in part on a location of the first thermal sensor in the first area of the logic element. A refresh rate for one or more portions of the memory stack is modified based at least in part on the estimated thermal conditions for the memory stack.

Abstract: Memory operations using system thermal sensor data. An embodiment of a memory device includes a memory stack including one or more coupled memory elements, and a logic chip coupled with the memory stack, the logic chip including a memory controller and one or more thermal sensors, where the one or more thermal sensors include a first thermal sensor located in a first area of the logic chip. The memory controller obtains thermal values of the one or more thermal sensors, where the logic element is to estimate thermal conditions for the memory stack using the thermal values, the determination of the estimated thermal conditions for the memory stack being based at least in part on a location of the first thermal sensor in the first area of the logic element. A refresh rate for one or more portions of the memory stack is modified based at least in part on the estimated thermal conditions for the memory stack.