Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a a quaternized pyridinium salt compound for leveling.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.

Abstract: In accordance with an example embodiment of the present invention, an apparatus comprising a user interface configured to: display a plurality of selectable objects on a display, each of the plurality of selectable objects having a selection area. The apparatus further comprises a processor configured to: receive a user input within the selection area to select a first object, the first object being at least one of the plurality of selectable objects. Further, the apparatus comprises the user interface further configured to display an expanded selection area for the first object based at least in part on the user input.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device. The plating composition comprises an electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: In accordance with an example embodiment of the present invention, an apparatus comprising a user interface configured to: display a plurality of selectable objects on a display, each of the plurality of selectable objects having a selection area. The apparatus further comprises a processor configured to: receive a user input within the selection area to select a first object, the first object being at least one of the plurality of selectable objects. Further, the apparatus comprises the user interface further configured to display an expanded selection area for the first object based at least in part on the user input.

Abstract: Electrolessly depositing a cobalt-based alloy on a metal surface of a substrate in a process which involves monitoring for Co3+ ion concentration in a sample of the electroless cobalt deposition composition during said contacting; and replacing or regenerating the electroless cobalt deposition composition when the concentration of Co3+ ions exceeds a predetermined concentration of Co3+ ions.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is greater than Cu deposition on the side walls.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.