Patents by Inventor Paul Franklin Nealey

Paul Franklin Nealey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10969642
    Abstract: Stable, macroscopic single-crystal chiral liquid crystal compositions are described. The compositions include a single-crystal chiral liquid crystal material on a patterned surface. The patterned surface seeds a particular crystallographic orientation at the substrate-liquid crystal interface. Also described are methods of forming the single-crystal chiral liquid crystal compositions.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: April 6, 2021
    Assignee: The University of Chicago
    Inventors: Juan Jose de Pablo, Paul Franklin Nealey, Xiao Li, Jose A. Martinez-Gonzalez, Monirosadat Sadati, Rui Zhang, Ye Zhou
  • Patent number: 10755942
    Abstract: Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: August 25, 2020
    Assignees: Massachusetts Institute of Technology, University of Chicago
    Inventors: Do Han Kim, Hyo Seon Suh, Priya Moni, Karen K. Gleason, Paul Franklin Nealey
  • Publication number: 20190049767
    Abstract: Stable, macroscopic single-crystal chiral liquid crystal compositions are described. The compositions include a single-crystal chiral liquid crystal material on a patterned surface. The patterned surface seeds a particular crystallographic orientation at the substrate-liquid crystal interface. Also described are methods of forming the single-crystal chiral liquid crystal compositions.
    Type: Application
    Filed: July 30, 2018
    Publication date: February 14, 2019
    Inventors: Juan Jose de Pablo, Paul Franklin Nealey, Xiao Li, Jose A. Martinez-Gonzalez, Monirosadat Sadati, Rui Zhang, Ye Zhou
  • Patent number: 10179866
    Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the cation moiety of the compound (IL) having a dipole moment of 3 debye or more.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: January 15, 2019
    Assignees: TOKYO OHKA KOGYO CO., LTD., THE UNIVERSITY OF CHICAGO
    Inventors: Akiya Kawaue, Takehiro Seshimo, Takaya Maehashi, Tasuku Matsumiya, Ken Miyagi, Hitoshi Yamano, Xuanxuan Chen, Paul Franklin Nealey
  • Publication number: 20180122648
    Abstract: Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.
    Type: Application
    Filed: August 24, 2017
    Publication date: May 3, 2018
    Inventors: Do Han Kim, Hyo Seon Suh, Priya Moni, Karen K. Gleason, Paul Franklin Nealey
  • Patent number: 9927706
    Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: March 27, 2018
    Assignees: The University of Chicago, Wisconsin Alumni Research Foundation
    Inventors: Paul Franklin Nealey, Tzu-Hsuan Chang, Shisheng Xiong, Zhenqiang Ma, Michael Scott Arnold, Robert Jacobberger
  • Patent number: 9914847
    Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the energy of the LUMO of the cation moiety being ?4.5 eV or more, and the energy difference between the LUMO and the HOMO of the cation moiety being 10.0 ev or more, or the Log P value of the anion moiety being 1 to 3.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: March 13, 2018
    Assignees: TOKYO OHKA KOGYO CO., LTD., THE UNIVERSITY OF CHICAGO
    Inventors: Akiya Kawaue, Takehiro Seshimo, Takaya Maehashi, Tasuku Matsumiya, Ken Miyagi, Hitoshi Yamano, Xuanxuan Chen, Paul Franklin Nealey
  • Publication number: 20170362460
    Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the energy of the LUMO of the cation moiety being ?4.5 eV or more, and the energy difference between the LUMO and the HOMO of the cation moiety being 10.0 ev or more, or the Log P value of the anion moiety being 1 to 3.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 21, 2017
    Inventors: Akiya KAWAUE, Takehiro SESHIMO, Takaya MAEHASHI, Tasuku MATSUMIYA, Ken MIYAGI, Hitoshi YAMANO, Xuanxuan CHEN, Paul Franklin NEALEY
  • Patent number: 9828519
    Abstract: A resin composition for forming a phase-separated structure, including a block copolymer, and an ion liquid containing a compound having a cation moiety and an anion moiety, the anion moiety being represented by general formula (a1), (a2) or (a3), in which X? represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y? and Z? each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; R? represents an alkyl group of 1 to 5 carbon atoms in which at least one hydrogen atom is optionally substituted with a fluorine atom, m represents an integer of 1 to 6, and n represents an integer of 0 to 5, provided that m+n=6.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: November 28, 2017
    Assignees: TOKYO OHKA KOGYO CO., LTD., THE UNIVERSITY OF CHICAGO
    Inventors: Akiya Kawaue, Takehiro Seshimo, Takaya Maehashi, Tasuku Matsumiya, Ken Miyagi, Hitoshi Yamano, Xuanxuan Chen, Paul Franklin Nealey
  • Publication number: 20170240767
    Abstract: A resin composition for forming a phase-separated structure, including a block copolymer, and an ion liquid containing a compound having a cation moiety and an anion moiety, the anion moiety being represented by general formula (a1), (a2) or (a3), in which X? represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y? and Z? each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; R? represents an alkyl group of 1 to 5 carbon atoms in which at least one hydrogen atom is optionally substituted with a fluorine atom, m represents an integer of 1 to 6, and n represents an integer of 0 to 5, provided that m+n=6.
    Type: Application
    Filed: February 18, 2016
    Publication date: August 24, 2017
    Inventors: Akiya KAWAUE, Takehiro SESHIMO, Takaya MAEHASHI, Tasuku MATSUMIYA, Ken MIYAGI, Hitoshi YAMANO, Xuanxuan CHEN, Paul Franklin NEALEY
  • Publication number: 20170240766
    Abstract: A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the cation moiety of the compound (IL) having a dipole moment of 3 debye or more.
    Type: Application
    Filed: February 18, 2016
    Publication date: August 24, 2017
    Inventors: Akiya KAWAUE, Takehiro SESHIMO, Takaya MAEHASHI, Tasuku MATSUMIYA, Ken MIYAGI, Hitoshi YAMANO, Xuanxuan CHEN, Paul Franklin NEALEY
  • Patent number: 9718250
    Abstract: Provided are methods of fabricating thin film structures that involve assembling block copolymer materials in the presence of condensed phase surfaces on both sides of the thin film, at least one of which is a chemically patterned surface configured to direct the assembly of the block copolymer material. According to various embodiments, the other of the condensed phase surfaces can be a chemically homogenous surface or a chemically patterned surface. Also provided are structures, morphologies, and templates formed in the domain structure of block copolymer materials. In certain embodiments, complex 3-D morphologies and related structures not present in bulk block copolymer materials are provided.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: August 1, 2017
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Paul Franklin Nealey, Huiman Kang, Guoliang Liu, Hiroshi Yoshida, Yashuhiko Tada, Juan Jose De Pablo, Abelardo Ramirez-Hernandez
  • Publication number: 20170062229
    Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
    Type: Application
    Filed: July 20, 2016
    Publication date: March 2, 2017
    Inventors: Paul Franklin Nealey, Tzu-Hsuan Chang, Shisheng Xiong, Zhenqiang Ma, Michael Scott Arnold, Robert Jacobberger
  • Patent number: 9580534
    Abstract: Provided herein are methods of formulating and engineering block copolymer (BCP) systems for directed self-assembly (DSA) processes. In some embodiments, the methods involve engineering a BCP material based on the interaction parameter (?) of the material and the surface and/or interaction energies of its constituent blocks. Also provided are novel block BCP materials that can be used in DSA techniques. In some embodiments, the BCP systems described herein have micro-phase separating blocks, with at least one block including multiple types of repeat units. Also provided are structures formed by DSA, including structures having a sub-20 nm dimension. Applications included nanolithography for semiconductor devices, fabrication of cell-based assays, nanoprinting, photovoltaic cells, and surface-conduction electron-emitter displays.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: February 28, 2017
    Assignees: Wisconsin Alumni Research Foundation, The Regents of the University of Minnesota
    Inventors: Paul Franklin Nealey, Frank S. Bates, Sangwon Kim
  • Patent number: 9539788
    Abstract: Methods of fabricating complex three-dimensional structures on patterned substrates and related compositions are provided. The methods involve depositing on the substrate a block copolymer material that is “mismatched” to the substrate pattern, and then ordering the material to form a complex three-dimensional structure. According to various embodiments, the copolymer material mismatches the substrate pattern in that the symmetry and/or length scale of its bulk morphology differs from that of the pattern. When ordered, a balance between the physics that determines the bulk block copolymer morphology and the physics that determines the substrate surface interfacial interactions results in a thermodynamically stable complex three-dimensional film that varies in a direction perpendicular to the substrate and has a morphology that differs from its bulk morphology.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: January 10, 2017
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Paul Franklin Nealey, Mark Petar Stoykovich, Konstantinos C. Daoulas, Marcus Muller, Juan J. De Pablo, SangMin Park
  • Publication number: 20160297986
    Abstract: Provided are methods of patterning block copolymer (BCP) films with independent control of the size, periodicity and morphology of the resulting nanoscale domains. Also disclosed are BCP patterns having discrete areas of different self-assembled BCP thin films on a surface, the BCP thin films differing in one or more of molecular weight (MW), composition, morphology, and feature size. In some implementations, multiple BCPs with different MWs can be printed onto a single substrate, thereby providing access to patterns with diverse geometries and feature sizes. The printing approaches can be applied to various BCP chemistries, morphologies and directed self-assembly (DSA) strategies. Also provided are methods of forming BCP thin films on patterns of polymer brushes formed by electrohydrodynamic printing. The methods involve direct, high resolution electrohydrodynamic delivery of random copolymer brushes as surface wetting layers to control the geometries of nanoscale domains in spin-cast and printed BCPs.
    Type: Application
    Filed: August 14, 2014
    Publication date: October 13, 2016
    Inventors: Mustafa Serdar Onses, John A. Rogers, Placid Ferreira, Andrew Alleyne, Paul Franklin Nealey
  • Patent number: 9372398
    Abstract: Provided herein are block copolymer thin film structures and methods of fabrication. The methods involve directing the assembly of ABA triblock copolymers such that desired features are formed by domains of the assembled ABA triblock copolymer. In some embodiments, an ABA triblock copolymer is directed to assemble by a chemical pattern. Chemical patterns with periods much different than the natural period of the ABA triblock copolymer may be used to direct assembly of the ABA triblock copolymer.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: June 21, 2016
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Paul Franklin Nealey, Shengxiang Ji
  • Patent number: 9183870
    Abstract: Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided.
    Type: Grant
    Filed: December 5, 2008
    Date of Patent: November 10, 2015
    Assignees: Wisconsin Alumni Research Foundation, HGST Netherlands B.V.
    Inventors: Paul Franklin Nealey, Huiman Kang, Francois Detcheverry, Juan J. De Pablo, Ricardo Ruiz, Thomas Albrecht
  • Patent number: 8815105
    Abstract: A method for making a master mold used to nanoimprint patterned magnetic recording disks that have chevron servo patterns with minimal defects uses directed self-assembly of block copolymers. A pattern of chemically modified polymer brush material is formed on the master mold substrate. The pattern includes sets of slanted stripes and interface strips between the sets of slanted stripes. A block copolymer material is deposited on the pattern, which results in directed self-assembly of the block copolymer as lamellae perpendicular to the substrate that are formed into alternating slanted stripes of alternating first and second components of the block copolymer. This component also forms on the interface strips, but as a lamella parallel to the substrate. One of the components is then removed, leaving the remaining component as a grid that acts as a mask for etching the substrate to form the master mold.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: August 26, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Elizabeth Ann Dobisz, Ricardo Ruiz, Guoliang Liu, Paul Franklin Nealey
  • Publication number: 20140087142
    Abstract: Methods of fabricating complex three-dimensional structures on patterned substrates and related compositions are provided. The methods involve depositing on the substrate a block copolymer material that is “mismatched” to the substrate pattern, and then ordering the material to form a complex three-dimensional structure. According to various embodiments, the copolymer material mismatches the substrate pattern in that the symmetry and/or length scale of its bulk morphology differs from that of the pattern. When ordered, a balance between the physics that determines the bulk block copolymer morphology and the physics that determines the substrate surface interfacial interactions results in a thermodynamically stable complex three-dimensional film that varies in a direction perpendicular to the substrate and has a morphology that differs from its bulk morphology.
    Type: Application
    Filed: November 27, 2013
    Publication date: March 27, 2014
    Applicant: Wisconsin Alumni Research Foundation
    Inventors: Paul Franklin Nealey, Mark Petar Stoykovich, Konstantinos C. Daoulas, Marcus Muller, Juan J. De Pablo, SangMin Park