Abstract: A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

Abstract: A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.

Abstract: The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.

Abstract: The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 ?/minute or less.

Abstract: A method of producing a nanoporous silica dielectric film having improved mechanical strength. A composition is formed which comprises in admixture a porogen, a solvent, a catalyst and a combination of silicon containing pre-polymers.

Abstract: The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen.

Abstract: The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen.

Abstract: The present invention provides a composition comprising: (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; G is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1; (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate whe

Abstract: The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.

Abstract: The present invention provides a composition comprising: (a) thermosetling component comprising (1) optionally at least one monomer of Formula I as sel forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from hydrogen, aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; Gw is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1; adhesion promoter comprising compound having least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with

Abstract: The present invention provides a composition comprising (a) thermosetting component comprising: (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where E, Q, G, h, l, j, and w are as set forth below and (b) porogen that bonds to thermosetting component (a). Preferably, the porogen is selected from the group consisting of unsubstituted polynorbornene, substituted polynorbornene, polycaprolactone, unsubstituted polystyrene, substituted polystyrene, polyacenaphthylene homopolymer, and polyacenaphthylene copolymer. Preferably, the present compositions may be used as dielectric substrate in microchips, multichip modules, laminated circuit boards, or printed wiring boards.

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

Abstract: The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen.

Abstract: The present invention provides a composition comprising:

Abstract: The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen.

Abstract: The present invention provides a composition comprising:

Abstract: The present invention provides a composition comprising (a) thermosetting component comprising: (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where E, Q, G, h, I, j, and w are as set forth below and (b) porogen that bonds to thermosetting component (a). Preferably, the porogen is selected from the group consisting of unsubstituted polynorbornene, substituted polynorbornene, polycaprolactone, unsubstituted polystyrene, substituted polystyrene, polyacenaphthylene homopolymer, and polyacenaphthylene copolymer. Preferably, the present compositions may be used as dielectric substrate in microchips, multichip modules, laminated circuit boards, or printed wiring boards.

Abstract: An inflatable system which uses a fast-burning propellant material distributed within the inflatable component of the system to generate the gas inflating the system. The invention preferably includes a distributed fast-burning igniter material, which may be enhanced with additional gas-generating materials to increase the quantities of gas generated, an optional layer, coating, or sheath of supplemental gas-generating material, an environmentally-sealed sheath to protect the enclosed materials from contamination and to improve the burn rates and efficiencies of the propellant and ignition materials, and an electronic squib used to actuate the igniter material upon a signal from the electronic sensor.

Abstract: Condensation polymerization followed by a supercritical extraction step can be used to obtain highly cross-linked nanoporous polymers with high surface area, controlled pore sizes and rigid structural integrity. The invention polymers are useful for applications requiring separation membranes.

Abstract: Condensation polymerization followed by a supercritical extraction step can be used to obtain highly cross-linked nanoporous polymers with high surface area, controlled pore sizes and rigid structural integrity. The invention polymers are useful for applications requiring separation membranes.