Patents by Inventor Paul G. Evans

Paul G. Evans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reinforced hinged connector
    Patent number: 11946503
    Abstract: A connector is provided to attach a supported member to a supporting member, with the supported member being in sloped and skewed relation to the supporting member. The connector has back members attached to side members. A seat member attaches to the side members through a hinged connection. The seat member interfaces with the bottom face of the supported member and can be disposed at a sloped angle. A pair of seat side members extend from the seat member.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: April 2, 2024
    Assignee: Simpson Strong-Tie Company Inc.
    Inventors: Thomas G. Evans, Dustin P. Muhn, Rachel Marie Holland, Benedict Ang, Paul Howard Oellerich, James M. Benton, Timothy Patrick Murphy
  • Functionalized ZnO or ZnO alloy films exhibiting high electron mobility
    Patent number: 9755024
    Abstract: Functionalized films are provided comprising a film of ZnO or ZnO alloy disposed over a supporting substrate and a layer of organic molecules comprising terminal carboxylic acid linkage groups, wherein the organic molecules are bound to a surface of the film of ZnO or ZnO alloy via the terminal carboxylic acid linkage groups. Thin film transistors comprising the functionalized films are also provided. The functionalized films may be formed using polycrystalline ZnO and saturated fatty acids, such as stearic acid.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: September 5, 2017
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Paul G. Evans, Josef W. Spalenka
  • Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
    Patent number: 9181092
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: November 10, 2015
    Assignee: WISCONSIN ALUMNI RESEARCH FOUNDATION
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • FUNCTIONALIZED ZNO OR ZNO ALLOY FILMS EXHIBITING HIGH ELECTRON MOBILITY
    Publication number: 20140203826
    Abstract: Functionalized films are provided comprising a film of ZnO or ZnO alloy disposed over a supporting substrate and a layer of organic molecules comprising terminal carboxylic acid linkage groups, wherein the organic molecules are bound to a surface of the film of ZnO or ZnO alloy via the terminal carboxylic acid linkage groups. Thin film transistors comprising the functionalized films are also provided. The functionalized films may be formed using polycrystalline ZnO and saturated fatty acids, such as stearic acid.
    Type: Application
    Filed: January 23, 2014
    Publication date: July 24, 2014
    Applicant: Wisconsin Alumni Research Foundation
    Inventors: Paul G. Evans, Josef W. Spalenka
  • SEMICONDUCTOR NANOWIRE THERMOELECTRIC MATERIALS AND DEVICES, AND PROCESSES FOR PRODUCING SAME
    Publication number: 20140024202
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Application
    Filed: July 18, 2013
    Publication date: January 23, 2014
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
    Patent number: 8536440
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: September 17, 2013
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • Front and backside processed thin film electronic devices
    Patent number: 8089073
    Abstract: This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Grant
    Filed: September 8, 2010
    Date of Patent: January 3, 2012
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Paul G. Evans, Max G. Lagally, Zhenqiang Ma, Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson
  • SEMICONDUCTOR NANOWIRE THERMOELECTRIC MATERIALS AND DEVICES, AND PROCESSES FOR PRODUCING SAME
    Publication number: 20110100411
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Application
    Filed: January 7, 2011
    Publication date: May 5, 2011
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Riz
  • Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
    Patent number: 7888583
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Grant
    Filed: May 7, 2007
    Date of Patent: February 15, 2011
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES
    Publication number: 20100327355
    Abstract: This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Application
    Filed: September 8, 2010
    Publication date: December 30, 2010
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • Front and backside processed thin film electronic devices
    Patent number: 7812353
    Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: October 12, 2010
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES
    Publication number: 20080315253
    Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Application
    Filed: March 4, 2008
    Publication date: December 25, 2008
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • SEMICONDUCTOR NANOWIRE THERMOELECTRIC MATERIALS AND DEVICES, AND PROCESSES FOR PRODUCING SAME
    Publication number: 20080276979
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Application
    Filed: May 7, 2007
    Publication date: November 13, 2008
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • Method for double-sided processing of thin film transistors
    Patent number: 7354809
    Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
    Type: Grant
    Filed: February 13, 2006
    Date of Patent: April 8, 2008
    Assignee: Wisconsin Alumi Research Foundation
    Inventors: Hao-Chih Yuan, Guogong Wang, Mark A. Eriksson, Paul G. Evans, Max G. Lagally, Zhenqiang Ma
  • Internal combustion engine oil pump with cover
    Patent number: 5152264
    Abstract: An I.C. engine lubrication system comprises a gerotor pump set driven by a gear meshed with another gear on the crankshaft (FIG. 1). This enables pump diameter to be selected for minimum power absorption as compared with prior art arrangements where the gerotor surrounds the crankshaft, and also simplifies pipework particularly on the delivery side of the pump.
    Type: Grant
    Filed: May 9, 1991
    Date of Patent: October 6, 1992
    Assignee: Concentric Pumps Limited
    Inventor: Paul G. Evans