Abstract: An MOS device having a planar configuration in which the top surfaces of the source, drain and gate electrodes are coplanar, and the overlying electrical contact structure is also planar, is produced by a method of fabrication in which the gate is defined by forming an oxide mesa on a substrate, building up the substrate with semiconductor material around the mesa, removing the mesa, and filling the resultant trough with doped polysilicon to form the self-aligned gate. Line width and alignment control are enchanced. The planarity of the device and the improved dimensional control enable a reduction of device dimensions and consequently increased device density in integrated circuits.

Abstract: There is disclosed a dielectric reflector for selective wavelength reflection which comprises an alternately deposited series of thin films of silicon and silicon dioxide layers respectively arranged in an alternating sequence of at least one layer of each type of material. This reflector is suitable for use on the reflecting electrode of a liquid crystal video display panel fabricated on a semiconductor substrate. The use of the dielectric reflector in place of other types of reflectors increases the available reflectivity and permits a preselected color or wavelength to be preferentially reflected. The polysilicon layer of the dielectric reflector is doped with p-type or n-type impurities such as boron or phosphorus to make this layer electrically conductive.