Abstract: In one example, a method of image processing includes acquiring a plurality of input image frames, detecting at least one object of interest in individual image frames of the plurality of image frames, for the individual image frames, producing a respective bounding box corresponding to the at least one object of interest, the bounding box describing coordinates of a boundary of the object of interest within a respective individual image frame, temporally averaging corresponding pixel values of pixels within the bounding box over the plurality of image frames to produce a plurality of averaged pixel values, and producing an output image in which pixels within an area of the output image described by coordinates of the bounding box are replaced with the averaged pixel values.

Abstract: An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.

Abstract: An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.

Abstract: An imaging array having a plurality of pixel sensors connected to a bit line is disclosed. Each pixel sensor includes a capacitive overflow pixel sensor characterized by an overflow capacitor having a switching terminal, and a floating diffusion node, a buffer amplifier that connects the floating diffusion node to a bit line in response to row select signal, and a switch that connects the switching terminal to either ground or a boost voltage. The imaging array also includes a switch controller that controls the switch and is connected to the bit line, the switch controller determining a voltage on the bit line, the switch controller connecting the switching terminal to the boost voltage during an exposure of the pixel sensor to light and to either ground or the boost voltage during a readout of charge stored on the overflow capacitor depending on the voltage on the bit line.

Abstract: An imaging array having a plurality of pixel sensors connected to a bit line is disclosed. Each pixel sensor includes a first photodetector having a photodiode, a floating diffusion node, and an amplifier. The floating diffusion node is characterized by a parasitic photodiode and parasitic capacitance. The amplifier amplifies a voltage on the floating diffusion node to produce a signal on an amplifier output. The first photodetector also includes a bit line gate that connects the amplifier output to the bit line in response to a row select signal and a voltage dividing capacitor having a first terminal connected to the floating diffusion node and a second terminal connected to a drive source that switches a voltage on the second terminal between a drive potential different from ground and ground in response to a drive control signal.

Abstract: An imaging array having a plurality of pixel sensors connected to a bit line is disclosed. Each pixel sensor includes a first photodetector having a photodiode, a floating diffusion node, and an amplifier. The floating diffusion node is characterized by a parasitic photodiode and parasitic capacitance. The amplifier amplifies a voltage on the floating diffusion node to produce a signal on an amplifier output. The first photodetector also includes a bit line gate that connects the amplifier output to the bit line in response to a row select signal and a voltage dividing capacitor having a first terminal connected to the floating diffusion node and a second terminal connected to a drive source that switches a voltage on the second terminal between a drive potential different from ground and ground in response to a drive control signal.