Abstract: An oscillator circuit including a ring oscillator and a reference current source is provided. The ring oscillator includes an odd number of inverter stages. Each inverter stage includes a first transistor having a first reference threshold that varies over temperature. The reference current source is configured to generate a plurality of currents, where a respective current is applied directly to the drain of a respective first transistor of a respective inverter stage. The reference current source includes a reference transistor that has a second reference threshold that varies over temperature; a resistor coupled between a gate and a source of the reference transistor; a second transistor having a source coupled to the gate of the reference transistor for generating a reference current that flows through the resistor to regulate a voltage of the resistor to the second threshold voltage; and a current mirror configured to generate the plurality of currents.

Abstract: An oscillator circuit including a ring oscillator and a reference current source is provided. The ring oscillator includes an odd number of inverter stages. Each inverter stage includes a first transistor having a first reference threshold that varies over temperature. The reference current source is configured to generate a plurality of currents, where a respective current is applied directly to the drain of a respective first transistor of a respective inverter stage. The reference current source includes a reference transistor that has a second reference threshold that varies over temperature; a resistor coupled between a gate and a source of the reference transistor; a second transistor having a source coupled to the gate of the reference transistor for generating a reference current that flows through the resistor to regulate a voltage of the resistor to the second threshold voltage; and a current mirror configured to generate the plurality of currents.

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.