Abstract: An example implantable medical device includes a plurality of electrodes; and circuitry configured to: sense, via at least two electrodes, electrical signals from a patient; generate a first physiological electrical signal during a first period of time at a first bandwidth and a first sampling rate; determine whether a particular feature of the first physiological electrical signal satisfies a health event high definition (HD) sensing threshold; and in response to a determination that a particular feature of the first physiological electrical signal satisfies a health event HD sensing threshold, generate a second physiological electrical signal during a second period of time at one or more of a second bandwidth or a second sampling rate, wherein the second period of time is after the first period of time, the second bandwidth is greater than the first bandwidth, and the second sampling rate is greater than the first sampling rate.

Abstract: A medical system includes a sensor location module, a first module, and a second module. The sensor location module determines a location of a magnetic field sensor within a magnetic field. The first module determines an acceleration of the magnetic field sensor. The second module indicates a modified location of the magnetic field sensor in an image of a medical patient based on the acceleration and one or more previously determined locations.

Abstract: A medical system includes a sensor location module, a first module, and a second module. The sensor location module determines a location of a magnetic field sensor within a magnetic field. The first module determines an acceleration of the magnetic field sensor. The second module indicates a modified location of the magnetic field sensor in an image of a medical patient based on the acceleration and one or more previously determined locations.

Abstract: Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.