Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

Abstract: Projection exposure methods, systems, sub-systems and components are disclosed. Methods can include performing a first exposure to image a first sub-pattern of the pattern, where the first sub-pattern includes a plurality of first features extending in a first direction and spaced apart essentially periodically at a predominant periodicity length P in a second direction perpendicular to the first direction. The first exposure can be performed using a multipolar illumination mode that includes at least one substantially dipolar intensity distribution having two illumination poles positioned on a pole orientation axis substantially parallel to the second direction and spaced apart from each other.

Abstract: Projection exposure methods, systems, sub-systems and components are disclosed. Methods can include performing a first exposure to image a first sub-pattern of the pattern, where the first sub-pattern includes a plurality of first features extending in a first direction and spaced apart essentially periodically at a predominant periodicity length P in a second direction perpendicular to the first direction. The first exposure can be performed using a multipolar illumination mode that includes at least one substantially dipolar intensity distribution having two illumination poles positioned on a pole orientation axis substantially parallel to the second direction and spaced apart from each other.

Abstract: Method for setting an illumination setting in an illumination optical unit comprising at least one controllable correction device, which includes a multiplicity of adjustable correction elements for influencing the transmission, wherein the illumination setting is varied for adapting a predetermined imaging parameter in the region of an image field.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract: A projection exposure system includes an illumination system configured to illuminate a mask with radiation. The projection exposure system also includes a projection objective configured to project an image of a pattern of the mask onto a radiation-sensitive substrate. The projection exposure system further includes an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle-selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function.

Abstract: Projection exposure methods, systems, sub-systems and components are disclosed. Methods can include performing a first exposure to image a first sub-pattern of the pattern, where the first sub-pattern includes a plurality of first features extending in a first direction and spaced apart essentially periodically at a predominant periodicity length P in a second direction perpendicular to the first direction. The first exposure can be performed using a multipolar illumination mode that includes at least one substantially dipolar intensity distribution having two illumination poles positioned on a pole orientation axis substantially parallel to the second direction and spaced apart from each other.

Abstract: Method for setting an illumination setting in an illumination optical unit comprising at least one controllable correction device, which includes a multiplicity of adjustable correction elements for influencing the transmission, wherein the illumination setting is varied for adapting a predetermined imaging parameter in the region of an image field.

Abstract: Projection exposure methods, systems, sub-systems and components are disclosed. Methods can include performing a first exposure to image a first sub-pattern of the pattern, where the first sub-pattern includes a plurality of first features extending in a first direction and spaced apart essentially periodically at a predominant periodicity length P in a second direction perpendicular to the first direction. The first exposure can be performed using a multipolar illumination mode that includes at least one substantially dipolar intensity distribution having two illumination poles positioned on a pole orientation axis substantially parallel to the second direction and spaced apart from each other. The poles of the dipolar intensity distribution can each have an azimuthal width defined by a pole angle ?, and a pole area APOLE according to: 0.6<APOLE/AOPT<1.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract: In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.

Abstract: A method is disclosed for improving an optical imaging property, for example spherical aberration or the focal length, of a projection objective of a microlithographic projection exposure apparatus. First, an immersion liquid is introduced into an interspace between a photosensitive surface and an end face of the projection objective. Then an imaging property of the projection objective is determined, for example using an interferometer or a CCD sensor arranged in an image plane of the projection objective. This imaging property is compared with a target imaging property. Finally, the temperature of the immersion liquid is changed until the determined imaging property is as close as possible to the target imaging property.

Abstract: An illumination system for illuminating a mask in a microlithographic exposure apparatus has an optical axis and a pupil surface. The system can include an array of reflective or transparent beam deflection elements such as mirrors. Each deflection element can be adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal. The beam deflection elements can be arranged in a first plane. The system can further include an optical raster element, which includes a plurality of microlenses and/or diffractive structures. The beam deflection elements), which can be arranged in a first plane, and the optical raster element, which can be arranged in a second plane, can commonly produce a two-dimensional far field intensity distribution. An optical imaging system can optically conjugate the first plane to the second plane.

Abstract: A system and associated method employ a first projection objective including at least one optical proximity correction (OPC) filter with a filter function adapted to a particular pattern. The first projection objective has at least essentially the same imaging properties as a second projection objective in the system, for the particular pattern, to which the filter function of the optical proximity correction (OPC) filter is adapted. The first projection objective differs from the second projection objective with respect to optical imaging properties for the particular pattern when the optical proximity correction (OPC) filter is not present in the first projection objective.

Abstract: A method is disclosed for improving an optical imaging property, for example spherical aberration or the focal length, of a projection objective of a microlithographic projection exposure apparatus. First, an immersion liquid is introduced into an interspace between a photosensitive surface and an end face of the projection objective. Then an imaging property of the projection objective is determined, for example using an interferometer or a CCD sensor arranged in an image plane of the projection objective. This imaging property is compared with a target imaging property. Finally, the temperature of the immersion liquid is changed until the determined imaging property is as close as possible to the target imaging property.

Abstract: A system provided with a first projection objective including at least one optical proximity correction (OPC) filter having a filter function adapted to a particular pattern. The first projection objective and a second projection objective in the system have, for the particular pattern, to which the filter function of the optical proximity correction (OPC) filter is adapted, at least essentially the same imaging properties. The first projection objective differs from the second projection objective with respect to optical imaging properties for the particular pattern when the optical proximity correction (OPC) filter is not present in the first projection objective. An associated method is also disclosed.

Abstract: In a method for correcting optical proximity effects (Optical Proximity Correction, OPC) when imaging a pattern, arranged in the object surface of a projection objective, into the image surface of the projection objective with the aid of a projection objective, a multiplicity of optical elements and at least one pupil surface that is Fourier-transformed to the image surface are arranged between the object surface and the image surface. An optical filtering of the light used for the imaging is carried out with the aid of at least one OPC filter inserted between the object surface and the image surface in accordance with an OPC filter function that is adapted to the pattern and corresponds to a spatially dependent transmission filtering in the region of the pupil surface of the imaging system.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.