Patents by Inventor PAUL HE

PAUL HE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140175580
    Abstract: A magnetoresistive memory device and a fabrication method are provided. A first dielectric layer disposed on a semiconductor substrate can include a groove formed therein. A cobalt metal layer can be formed over a bottom surface and a sidewall surface of the groove. A first metal layer can be formed over the cobalt metal layer. The first metal layer can fill the groove and be used as a first programming line of the magnetoresistive memory device. A second dielectric layer can be formed over the first dielectric layer and over the first metal layer. A magnetic tunnel junction can be formed over the second dielectric layer. The magnetic tunnel junction can be positioned corresponding to a position of the first metal layer. The magnetic tunnel junction can include an insulating layer sandwiched between a lower magnetic material layer and an upper magnetic material layer.
    Type: Application
    Filed: October 17, 2013
    Publication date: June 26, 2014
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: WENFU CHEN, PAUL HE, ALFRED ZHANG, SEN SHI