Abstract: A magnetoresistive memory device and a fabrication method are provided. A first dielectric layer disposed on a semiconductor substrate can include a groove formed therein. A cobalt metal layer can be formed over a bottom surface and a sidewall surface of the groove. A first metal layer can be formed over the cobalt metal layer. The first metal layer can fill the groove and be used as a first programming line of the magnetoresistive memory device. A second dielectric layer can be formed over the first dielectric layer and over the first metal layer. A magnetic tunnel junction can be formed over the second dielectric layer. The magnetic tunnel junction can be positioned corresponding to a position of the first metal layer. The magnetic tunnel junction can include an insulating layer sandwiched between a lower magnetic material layer and an upper magnetic material layer.