Abstract: A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.

Abstract: Method for metallising a porous structure made of carbon material, the method comprising the following steps: supplying a porous structure made of carbon material, immersing the porous structure in a solution comprising an ionic liquid, formed by a cation and an anion, and a metal precursor, placing the porous structure in a vacuum, immersed in the solution, in such a way as to cause the solution to penetrate into the porosity of the porous structure, adding a hydrogenated reducing agent, in such a way as to metallise the porous structure to within the porosity of the porous structure.

Abstract: A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.

Abstract: Method for metallising a porous structure made of carbon material, the method comprising the following steps: supplying a porous structure made of carbon material, immersing the porous structure in a solution comprising an ionic liquid, formed by a cation and an anion, and a metal precursor, placing the porous structure in a vacuum, immersed in the solution, in such a way as to cause the solution to penetrate into the porosity of the porous structure, adding a hydrogenated reducing agent, in such a way as to metallise the porous structure to within the porosity of the porous structure.

Abstract: The invention relates to a composition for synthesizing bimetallic nanoparticles, wherein the composition contains a first organometallic precursor and a second organometallic precursor having different decomposition rates and contained within an ionic liquid solution. The invention also relates to a method for synthesizing bimetallic nanoparticles, in which the composition is transformed under a hydrogen gas pressure between 0.1 and 10 MPa at a temperature between 0 and 150° C. until a suspension of bimetallic nanoparticles is obtained. The resulting nanoparticles are useful in diverse fields including the fields of catalysis and microelectronics.

Abstract: A method for producing a memory device with nanoparticles, comprising the steps of: a) forming, in a semi-conductor substrate, source and drain regions, and at least one first dielectric on a zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) deposition of an ionic liquid, comprising nanoparticles of an electrically conductive material in suspension, covering the first dielectric, c) formation of a deposition of nanoparticles on the first dielectric, d) removal of the remaining ionic liquid, e) forming a second dielectric and a control gate on at least one part of the deposition of nanoparticles.

Abstract: A method for making electrical interconnections of carbon nanotubes, including a) depositing an ionic liquid including nanoparticles of at least one suspended electrically conducting material, covering at least one surface of an element configured to be used as a support for carbon nanotubes, b) forming a deposit of the nanoparticles at least against the surface of the element, c) removing the remaining ionic liquid, d) growing carbon nanotubes from the deposited nanoparticles, and further including between the c) removing the remaining ionic liquid and the d) growing carbon nanotubes, passivating the deposited nanoparticles not found against the surface of the element.

Abstract: A method for producing a memory device with nanoparticles, including steps of: a) forming, in a substrate based on at least one semi-conductor, source and drain regions, and at least one first dielectric on at least one zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) depositing of at least one ionic liquid that is an organic salt or mixture of organic salts in a liquid state, wherein nanoparticles of at least one electrically conductive material are suspended in the ionic liquid, said ionic liquid covering at least said first dielectric, c) forming a deposition of said nanoparticles at least on said first dielectric, d) removing the ionic liquid remaining on the first dielectric, and e) forming at least one second dielectric and at least one control gate on at least one part of the nanoparticles deposited on the first dielectric.

Abstract: The invention relates to a composition for synthesizing bimetallic nanoparticles, wherein the composition contains a first organometallic precursor and a second organometallic precursor having different decomposition rates and contained within an ionic liquid solution. The invention also relates to a method for synthesizing bimetallic nanoparticles, in which the composition is transformed under a hydrogen gas pressure between 0.1 and 10 MPa at a temperature between 0 and 150° C. until a suspension of bimetallic nanoparticles is obtained. The resulting nanoparticles are useful in diverse fields including the fields of catalysis and microelectronics.

Abstract: A method for making electrical interconnections of carbon nanotubes, including a) depositing an ionic liquid including nanoparticles of at least one suspended electrically conducting material, covering at least one surface of an element configured to be used as a support for carbon nanotubes, b) forming a deposit of the nanoparticles at least against the surface of the element, c) removing the remaining ionic liquid, d) growing carbon nanotubes from the deposited nanoparticles, and further including between the c) removing the remaining ionic liquid and the d) growing carbon nanotubes, passivating the deposited nanoparticles not found against the surface of the element.

Abstract: A method for producing a memory device with nanoparticles, comprising the steps of: a) forming, in a semi-conductor substrate, source and drain regions, and at least one first dielectric on a zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) deposition of an ionic liquid, comprising nanoparticles of an electrically conductive material in suspension, covering the first dielectric, c) formation of a deposition of nanoparticles on the first dielectric, d) removal of the remaining ionic liquid, e) forming a second dielectric and a control gate on at least one part of the deposition of nanoparticles.

Abstract: The present invention relates to a process for coating a surface of a substrate with a seed film of a metallic material, the said surface being an electrically conductive or semiconductive surface and having recesses and/or projections. The process comprises the following: an organic film is placed on the said surface, the said film having a thickness such that the free face of this film conformally follows the recesses and/or projections of the said electrically conductive or semiconductive surface on which it is placed; a precursor of the metallic material is inserted within the said organic film placed on the said surface at the same time as, or after, the step consisting in placing the said organic film on the said surface; and the said precursor of the metallic material inserted within the said organic film is converted into the said metallic material. This process allows integrated circuits, interconnects in microelectronics and microsystems to be fabricated.

Abstract: A crystalline material for optically pumped solid state lasers has the chemical composition of M3RE1-x Ybx(BO3)3, where M is selected from the group Mg, Ca, Sr, Ba, and Ra, optionally replaced at least partially with another element from this group, RE is selected from the group Sc, Y, Lu, and Y partially replaced with Lu, and x is greater than or equal to 0 and less than or equal to 1. The material is useful for preparing lasers having high average initial power and short pulse duration, and has flat amplification and fluorescence spectra, high thermal conductivity and a large emission cross-section.

Abstract: A crystalline material for optically pumped solid state lasers has the chemical composition of M3RE1−xYbx(BO3)3, where M is selected from the group Mg, Ca, Sr, Ba, and Ra, optionally replaced at least partially with another element from this group, RE is selected from the group Sc, Y, Lu, and Y partially replaced with Lu, and x is greater than or equal to 0 and less than or equal to 1. The material is useful for preparing lasers having high average initial power and short pulse duration, and has flat amplification and fluorescence spectra, high thermal conductivity and a large emission cross-section.