Abstract: The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically.

Abstract: The present invention relates to a curling stone known wherein a support shell provided with one of more openings for rendering the brake device accessible is supportively placed between the handle and the housing, the support shell being provided in its upper surface with a central bore. In a preferred embodiment, the bracket of the brake device is an inherently resilient support member of star-shaped cross-sectional configuration with preferably three to six arms, radially narrowing slots being provided in the arms for receiving the brake surface supports.

Abstract: A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.