Abstract: A sensor for the intermittent or continuous detection of the presence of at least one analyte in an environmental sample includes at least one enzyme that is selected to either (i) catalyze a reaction of the analyte to chemically convert the analyte to a product compound or (ii) be inhibited by the analyte in the presence of a substrate compound. The sensor also includes at least one sensor for monitoring or at least one indicator compound selected to produce a measurable change of state as a result of the interaction of the analyte and the enzyme. Optionally, each of the enzyme and the indicator compound are incorporated within a single polymer.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, for example, a semiconductor wafer or the like. The present invention generally comprises a probe disposed proximate to the outer perimeter of a polishing pad on a CMP table, such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. The present invention may further comprise a nozzle which applies a stream of compressed air at the disk surface under inspection, to remove excess slurry from the local region of the workpiece being inspected. A broad band light source, namely a tungsten halogen light, is employed in conjunction with a fiber optic cable to direct light at the wafer surface.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: A method for detecting the presence of a workpiece on a polishing pad of a chemical mechanical polishing (CMP) machine applies an optical interrogation signal to a workpiece during the CMP process. An optical probe assembly produces a light signal that communicates with the polishing pad; portions of the light signal reflect from the polishing pad in a scattered manner. A light receptor receives reflected light associated with the interrogation signal, and the characteristics of the received light are analyzed and processed by a suitable processor. By analyzing the scattered light signals, the method distinguishes the reflective characteristics of the polishing pad from the reflective characteristics of the workpiece. Thus, the method may be used to detect a lost or broken workpiece in a fast and effective manner.

Abstract: A method for use with a chemical mechanical planarization (CMP) system includes an infrared LED emitter that generates an interrogation signal and directs the interrogation signal toward a polishing pad configured to process a workpiece during the CMP procedure. A reflected signal produced in response to the interrogation signal is received by a detector, and the reflected signal is processed by a converter to produce a control signal having an analog voltage. The control signal is processed and an output is produced indicative of the presence of extraneous material proximate an area of the polishing pad when the analog voltage is measured within a predetermined range. The predetermined voltage range is established such that a variety of polishing pads having different physical characteristics may be employed without altering the position of the emitter or the operating parameters of the apparatus.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe is disposed proximate to the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A nozzle may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source is employed in conjunction with a fiber optic cable to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable.

Abstract: A conditioning ring having cutting elements brazed-bonded to the bottom surface of the ring and suitably adopted for conditioning a workpiece polishing pad by contact with the pad. The conditioning ring further includes a flange extending about the bottom periphery of the ring with the cutting elements being attached to the bottom surface of the flange. The flange includes cutout portions for permitting material to escape from the interior of the ring. The cutting elements are distributed substantially uniformly across the bottom surface of the flange and the elements are brazed-bonded to the flange with a braised metal alloy, creating an extremely strong bond between the cutting elements and the flange surface.

Abstract: An apparatus for use with a chemical mechanical planarization (CMP) system includes an infrared LED emitter that generates an interrogation signal and directs the interrogation signal toward a polishing pad configured to process a workpiece during the CMP procedure. A reflected signal produced in response to the interrogation signal is received by a detector, and the reflected signal is processed by a converter to produce a control signal having an analog voltage. The control signal is processed and an output is produced indicative of the presence of extraneous material proximate an area of the polishing pad when the analog voltage is measured within a predetermined range. The predetermined voltage range is established such that a variety of polishing pads having different physical characteristics may be employed without altering the position of the emitter or the operating parameters of the apparatus.

Abstract: An apparatus for detecting the presence of a workpiece on a polishing pad of a chemical mechanical polishing (CMP) machine employs an optical interrogation signal that is applied during the CMP process. An optical probe assembly produces a light signal that communicates with the polishing pad; portions of the light signal reflect from the polishing pad in a scattered manner. A light receptor receives reflected light associated with the interrogation signal, and the characteristics of the received light are analyzed and processed by a processor used by the apparatus. By analyzing the scattered light signals, the apparatus distinguishes the reflective characteristics of the polishing pad from the reflective characteristics of the workpiece. Thus, the apparatus is capable of detecting a lost or broken workpiece in a fast and effective manner.