Abstract: Integrated circuit structures having deep via bar width tuning are described. For example, an integrated circuit structure includes a plurality of gate lines extending over first and second semiconductor nanowire stack channel structures or fin structures. A plurality of trench contacts is intervening with the plurality of gate lines. A conductive structure is between the first and second semiconductor nanowire stack channel structures or fin structures, the conductive structure having a first width in a first region and a second width in a second region between the first and second semiconductor nanowire stack channel structures or fin structures, the second width different than the first width.

Abstract: Multiple voltage threshold integrated circuit structures with local layout effect tuning, and methods of fabricating multiple voltage threshold integrated circuit structures with local layout effect tuning, are described. For example, an integrated circuit structure includes a first fin structure or vertical arrangement of horizontal nanowires. A second fin structure or vertical arrangement of horizontal nanowires is laterally spaced apart from the first fin structure or vertical arrangement of horizontal nanowires. An N-type gate structure is over the first fin structure or vertical arrangement of horizontal nanowires. A P-type gate structure is over the second fin structure or vertical arrangement of horizontal nanowires, the P-type gate structure in contact with the N-type gate structure with a PN boundary between the P-type gate structure and the N-type gate structure.

Abstract: Integrated circuit structures having reduced local layout effects, and methods of fabricating integrated circuit structures having reduced local layout effects, are described. For example, an integrated circuit structure includes an NMOS region including a first plurality of fin structures or vertical stacks of horizontal nanowires, and first alternating gate lines and trench contact structures over the first plurality of fin structures or vertical stacks of horizontal nanowires. The integrated circuit structure also includes a PMOS region including a second plurality of fin structures or vertical stacks of horizontal nanowires, and second alternating gate and trench contact structures over the second plurality of fin structures or vertical stacks of horizontal nanowires. A gate line is shared between the NMOS region and the PMOS region, and a trench contact structure is shared between the NMOS region and the PMOS region.

Abstract: A method and system for facilitating the filling out of a medical evaluation form online and/or for facilitating the reviewing of the medical information form online are disclosed. By filling out the medical information form online, the form can be filled out generally anywhere and generally any time prior to a consultation with the doctor. Assistance with the filling out process can be provided, such as by a friend or relative, without requiring that the person providing the assistance accompany the patient to the doctor's office. A doctor can review the medical evaluation form generally anywhere and generally any time prior to the consultation. On line and face-to-face medical evaluations and interactions can potentially be made safer, more efficient and of higher quality by using such a process.

Abstract: An outer cover shell and plate member soldering method includes the steps of: (a) applying a predetermined thickness of soldering material to the border of the plate member, (b) pressing the outer cover shell on the plate member in the platform of a high-frequency heating machine, (c) lifting the platform to let the outer cover shell be coupled to the induction coil of the high-frequency heating machine, (d) driving the high-frequency heating machine to output an oscillating current, causing a high temperature to be produced around the border of the outer cover shell within the induction coil, (e) letting the soldering material be melted due to the thermal effect of the outer cover shell, so that the outer cover shell and the plate member are bonded together.