Abstract: A power cable comprising: (A) a conductor, (B) an insulation layer, and (C) a semiconductor layer comprising in weight percent based on the weight of the semiconductor layer: (1) 49-98% of a crosslinked olefin block copolymer (OBC) having a density less than (<) 0.9 grams per cubic centimeter (g/cm3), a melt index greater than (>) 1, and comprising in weight percent based on the weight of the OBC: (a) 35-80% soft segment that comprises 5-50 mole percent (mol %) of units derived from a monomer comprising 3 to 30 carbon atoms; and (b) 20-65% hard segment that comprises 0.2-3.5 mol % of units derived from a monomer comprising 3 to 30 carbon atoms; (2) 2-51% conductive filler, the insulation layer and semiconductor layer in contact with one another, is degassed by a process comprising the step of exposing the cable to a temperature of at least 80° C. for a period of time of at least 24 hours.

Abstract: Flexible cable comprises a crosslinked insulation sheath made from a composition comprising in weight percent based on the weight of the composition; (A) 60-95% of an ethylene polymer of crystallinity of less than 40%; (B) 4 to less than 40% of a propylene polymer with an upper melting point of greater than or equal to (>)130° C.; and (C) >0.5% peroxide; with the proviso that the ethylene polymer either comprises a continuous matrix within which the propylene polymer is dispersed or is co-continuous with the propylene polymer. Compatibilizers are optional to the composition.

Abstract: A semiconducting shield composition comprising a polyolefin and acetylene black having at least one of the following properties: (a) a DBP oil adsorption of 150 ml/100 g to 200 ml/100 g; (b) an iodine absorption of 85 mg/g to 105 mg/g; (c) an apparent density of 0.2 g/ml to 0.4 g/ml; (d) a crystallite size along (002) less than 30 ?; and (e) a carbon-carbon bond length along (100) less than 2.42 ?. The semiconducting shield may be incorporated into a semiconducting layer and/or a semiconductor apparatus.

Abstract: Cable insulation shields comprising, in weight percent based upon the weight of the insulation shield, (A) 37-53% of ethylene vinyl acetate (EVA) having 30-33 wt % of units derived from vinyl acetate, (B) 10% or more nitrile butadiene rubber (NBR) having 25 to 55 wt % of units derived from acrylonitrile, and (C) 35% or more carbon black having (1) 80-115 milliliters per 100 grams (ml/100 g) dibutyl phthalate (DBP) absorption value, (2) 30 to 60 milligrams per gram (mg/g) iodine absorption (I2NO, and (3) 0.3 to 0.6 grams per milliliter (g/ml) apparent density), exhibit a strip force against an adjacent crosslinked polyethylene insulating layer of less than 5.4 kN/m (15 pounds per one-half inch).

Abstract: A semiconducting shield composition comprising a polyolefin and acetylene black having at least one of the following properties: (a) a DBP oil adsorption of 150 ml/100 g to 200 ml/100 g; (b) an iodine absorption of 85 mg/g to 105 mg/g; (c) an apparent density of 0.2 g/ml to 0.4 g/ml; (d) a crystallite size along (002) less than 30 A; and (e) a carbon-carbon bond length along (100) less than 2.42 A. The semiconducting shield may be incorporated into a semiconducting layer and/or a semiconductor apparatus.