Patents by Inventor Paul J. Rosser

Paul J. Rosser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming isolation trenches in silicon semiconductor bodies
    Patent number: 4957873
    Abstract: Isolation trenches are formed in a semiconductor, e.g. silicon, substrate by selectively doping the substrate and preferentially oxidizing the doped material. Typically the dopant is arsenic or phosphorus and preferably the substrate is doped to a level of at least 5.times.10.sup.19 cm.sup.-3.
    Type: Grant
    Filed: September 21, 1989
    Date of Patent: September 18, 1990
    Assignee: STC PLC
    Inventors: Sureshchandra M. Ojha, Paul J. Rosser, Philip B. Moynagh
  • Process of self aligned nitridation of TiSi.sub.2 to form TiN/TiSi.sub.2 contact
    Patent number: 4772571
    Abstract: In order to prevent diffusion of silicon from under a titanium disilicide interconnect (1) and into an overlying aluminium layer (6), the disilicide is selectively nitrided by annealing in nitrogen at the points where interconnection between the disilicide and aluminium is required via holes (4) in a silicon dioxide layer (3). The titanium nitrode contacts (5) thus formed in a truly self-aligned manner provide a good barrier to silicon diffusion while having an acceptable low resistivity.
    Type: Grant
    Filed: May 18, 1987
    Date of Patent: September 20, 1988
    Assignee: STC plc
    Inventors: Peter D. Scovell, Paul J. Rosser, Gary J. Tomkins
  • Manufacture of MOSFET with metal silicide contact
    Patent number: 4563805
    Abstract: Polysilicon elements of integrated circuits, for example gates (24) or interconnects, are provided with metallic silicide layers (26) in order to take advantage of the lower resistivity thereof. The polysilicon elements are defined on an oxide layer (23) disposed on a silicon substrate (20) before polysilicon metallization. After polysilicon metallization the metal and polysilicon are caused to interdiffuse to form silicide layers (26) covering the polysilicon elements (24).
    Type: Grant
    Filed: June 24, 1985
    Date of Patent: January 14, 1986
    Assignee: Standard Telephones and Cables, PLC
    Inventors: Peter D. Scovell, Paul J. Rosser, Gary J. Tomkins
  • Metallic silicide production
    Patent number: 4468308
    Abstract: A metallic silicide layer is formed on a substrate by pulse heating, in an inert atmosphere, metal and silicon deposited on the substrate to a temperature and for a time sufficient to cause interdiffusion of the metal and silicon.
    Type: Grant
    Filed: February 3, 1983
    Date of Patent: August 28, 1984
    Assignee: ITT Industries, Inc.
    Inventors: Peter D. Scovell, Paul J. Rosser, Gary J. Tomkins