Abstract: The invention provides apparatuses for detecting light from, for example, closely spaced detection sites. In one embodiment, the invention provides an apparatus for measuring the amount of light emitted from or transmitted through two or more detection sites of a first set of detection sites on a planar substrate while spatially resolving the measurements for each detection site of the first set, the apparatus comprising: for each detection site of the first set, an addressable source of a light beam directed to that detection site at a first angle; and an array detector comprising a plurality of light responsive pixels, wherein for each detection site of the first set there is at least one light responsive pixel that receives light emitted from or transmitted through that detection site at a second angle that can be the same as the first angle.

Abstract: The invention provides apparatuses for detecting light from, for example, closely spaced detection sites.

Abstract: A waveguide having walls defining an opening. An optically transmissive aperture in one wall allows light from an optical illumination source such as a laser diode array to illuminate the opening in which is located a semiconductor slab positioned to be illuminated. When the array illuminates the slab, the propagation characteristics (phase velocity and attenuation constant) of the waveguide changes. A continuous wave signal passing through the waveguide is thus attenuated and phase shifted. The laser array may be pulsed on and off while still maintaining the altered propagation constant.

Abstract: A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

Abstract: A photon energy activated PIN diode is reverse biased by a continuously supplied direct current voltage. The PIN diode is rendered conductive for passage of a radio frequency input signal when it is illuminated. Continuous illumination of the PIN diode is not required for conduction such that illumination may be pulsed on and off while the diode remains conductive.

Abstract: A diode in a semiconductor body has two laterally adjacent regions. Each region has buried portions. The first and second regions are doped with opposite conductivity type dopants. A buried P-N junction exists where the buried portions meet. Since the junction is buried, surface breakdown effects are greatly reduced. The lateral orientation provides for easier series connection or several such diodes. A method for making a diode in a body comprises forming two laterally adjacent buried portions of respective opposite conductivity type regions. A contact portion of at least one region is formed extending to the surface of the body.

Abstract: An amplifying apparatus has a plurality of series coupled laser diodes that impedance match a signal source impedance and which are optically coupled to at least one PIN diode that impedance matches a load impedance. A high DC voltage is applied to the PIN diode so that gain is obtained and signal power is applied to the load. A plurality of parallel coupled PIN diodes can be used or a series-parallel combination.

Abstract: An electrical short-circuit for alternating-current (ac) microwave signals is physically positionable in direct response to an electrical bias control without an intermediary electromechanical converter. The electrically positionable short circuit includes at least first and second doped regions in a semiconductor, separated by a region in which the short circuit is formed between the doped regions by the bias. A first embodiment comprises discrete diodes connected between conductors at different locations, the discrete diodes having different forward junction voltages, so that varying the common bias voltage varies the number of conducting diodes and thus positions the short circuit in a stepwise manner.

Abstract: A patch antenna, which may be one element of an antenna array, is formed on one broad surface of a semiconductor plate. A ground plane is formed on the second broad surface. This semiconductor is doped in regions near a periphery of the patch to define a semiconductor PN junction have electrode contacts to the patch and to the ground plane. The junction has capacitance which tunes the patch antenna. The characteristics of the junction are controlled by bias to selectively tune the patch antenna. The bias is a direct voltage in one embodiment of the invention. In another embodiment, the junction work function itself provides a bias which is controlled by temperature control of the diode.

Abstract: Antennas chiefly intended for microwave and millimeter-wave use include geometric-shaped conductive patches on one broad surface of a planar semiconductor substrate. The other broad side of the substrate bears a conductive ground plane. Monolithic PIN diodes are formed by doping the substrate at various points between the conductive patch and the ground plane. Biasing arrangements affect the conduction of the PIN diodes thereby affecting or tuning the optimum operating frequency, the radiation pattern, and/or the impedance of the antenna. In a particularly advantageous configuration, the PIN diodes have lateral dimensions greater than or equal to one-tenth wavelength (.lambda./10) at the operating frequency. Distributed diodes have lower resistance and reactance than discrete or discrete monolithic diodes, thereby providing improved radiating characteristics, and have a relatively large power-handling capability which makes them useful for power transmission.