Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.

Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.

Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.

Abstract: A closed drift ion source is disclosed. The ion source has an open end 1 and a central axis 150 around which are arranged outer magnetic pole piece 3, inner magnetic pole piece 5, anode 2, shield 6 and back magnetic shunt 17. In one embodiment the anode 2 and inner magnetic pole piece 5 are annular. Permanent magnets 7 are located behind the shield 6 and in contact with outer magnetic pole piece 3 and the back magnetic shunt 17. As a result the magnetic field lines pass through the magnetic pole pieces and a mirror magnetic field is set up in the discharge region between them. The inner magnetic pole piece 5 is hollow which facilitates production of the mirror magnetic field.

Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.

Abstract: A closed drift ion source is disclosed. The ion source has an open end 1 and a central axis 150 around which are arranged outer magnetic pole piece 3, inner magnetic pole piece 5, anode 2, shield 6 and back magnetic shunt 17. In one embodiment the anode 2 and inner magnetic pole piece 5 are annular. Permanent magnets 7 are located behind the shield 6 and in contact with outer magnetic pole piece 3 and the back magnetic shunt 17. As a result the magnetic field lines pass through the magnetic pole pieces and a mirror magnetic field is set up in the discharge region between them. The inner magnetic pole piece 5 is hollow which facilitates production of the mirror magnetic field.

Abstract: An apparatus and method are disclosed whereby if the arc in a DC or long-pulse AC vacuum arc plasma process (eg in vacuum deposition) starts to extinguish, this is automatically detected and a re-ignition process is activated. Detection of a tendency for the arc to extinguish is detected by monitoring the main power supply voltage, which will increase if the arc is extinguished.

Abstract: An apparatus and method are disclosed whereby if the arc in a DC or long-pulse AC vacuum arc plasma process (eg in vacuum deposition) starts to extinguish, this is automatically detected and a re-ignition process is activated. Detection of a tendency for the arc to extinguish is detected by monitoring the main power supply voltage, which will increase if the arc is extinguished.

Abstract: An apparatus and method are disclosed for a low-pressure steady-state direct current or long-pulse mode of plasma immersion ion implantation. A conducting grid is located between the wafer stage and the supply of plasma. The supply of plasma may be controlled through a variable aperture in which is provided the conducting grid.

Abstract: An apparatus and method are disclosed for a low-pressure steady-state direct current or long-pulse mode of plasma immersion ion implantation. A conducting grid is located between the wafer stage and the supply of plasma. The supply of plasma may be controlled through a variable aperture in which is provided the conducting grid.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201) and collection devices (221). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. The collection device accumulates charge that can detrimentally influence the substrate during processing. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a cotoured underlying surface (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The contoured underlying surface deflects impinging ions in a direction away from the substrate surface, thereby reducing a possibility of particulate contamination on the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with shielding (203). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a substrate. A shield (203) is disposed adjacent to the susceptor for blocking impurities that may possibly be introduced from a backside of the susceptor. The shield allows fewer impurities to be sputtered from the backside of the susceptor. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. The system (200) also includes a silicon liner, which is used to line inner portions of the chamber walls.

Abstract: A plasma immersion implantation system (100), including a network for controlling the system. The network communicates to the system by way of packets, which are used to pass signals to and from one of a plurality of controllers. The controllers are used to oversee one of a plurality of processing parameters or field processes such as rf voltage, pressure, etc.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.