Abstract: An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.

Abstract: An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.

Abstract: A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Abstract: A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Abstract: A gap filling process of depositing a film of SiO.sub.2 in gaps on a substrate by generating plasma in a process chamber by energizing gas containing silicon, oxygen and a heavy noble gas such as xenon or krypton. The gaps can have widths below 0.5 .mu.m and aspect ratios higher than 1.5:1. A substrate is supported on a substrate support wherein a gas passage supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support, and the film is grown in the gaps on the substrate by contacting the substrate with the plasma. The silicon reactant can be SiH.sub.4 and the oxygen reactant can be pure oxygen gas supplied by O.sub.2 /SiH.sub.4 ratio of .ltoreq.1.05. The plasma can be a high density plasma produced in an ECR or TCP reactor and the substrate can be a silicon wafer including aluminum conductor lines.

Abstract: A plasma resistant lightpipe is used in a pyrometric temperature measurement system to measure the temperature of a substrate in a reaction chamber. The plasma resistant lightpipe includes two lightpipe elements. The first lightpipe element, which may be a sapphire rod or aluminum nitride rod, is positioned within a backside gas delivery path to the chamber. The first lightpipe element is resistant to etching caused by reactive plasmas or gases used within the chamber, such as fluorine. The second lightpipe, which is a quartz rod, is positioned beneath the first lightpipe element such that the two lightpipe elements are optically coupled. The first lightpipe element may be directly mounted in the base plate or electrostatic chuck of the pedestal assembly or directly mounted in a plug, which is then positioned within the base plate or electrostatic chuck.

Abstract: A dielectric workpiece is clamped to a holder in a vacuum plasma processor chamber by applying the plasma to a surface of the workpiece exposed to the plasma simultaneously with applying a relatively high voltage to an electrode on the holder. The electrode is in close proximity to a portion of the workpiece not exposed to the plasma so (1) the electrode is at a voltage substantially different from the plasma, (2) electrostatic charge is applied to the exposed surface by the plasma, and (3) an electrical conducting path is provided via the plasma from the electrostatic charge to a terminal at a potential substantially different from the voltage applied to the electrode. Sufficient electrostatic clamping force is applied through the thickness of the workpiece by a voltage difference between the DC voltage applied to a single electrode and charge applied by the plasma to the exposed face to hold the substrate on the holder.

Abstract: An electrostatic clamp for dielectric substrates is operated with a low voltage electric source by reducing the width of electrode lines to less than 100 .mu.m and by reducing the spacing between adjacent electrode lines to less than 100 .mu.m. The electrostatic clamp includes an array of electrodes such as aluminum formed on a base of insulating material such as glass and covered by an insulating layer such as nitride which covers and protects the electrodes. Electrical contacts apply voltages of opposite polarities to alternating electrode lines to create a non-uniform electric field which causes a dielectric substrate to be pulled toward the region of highest electric field. The reduced width electrode lines and spacings are created by the use of micro-lithographic techniques including thin film deposition and etching for formation of the electrode and the coating layers.

Abstract: An electrostatic clamping apparatus with lip seal for holding substrates in a vacuum processing chamber. The apparatus includes an electrostatic clamp, a sealing member surrounding the electrostatic clamp, and an edge ring surrounding the sealing member and holding the sealing member in place against the electrostatic clamp. The sealing member provides a seal between the electrostatic clamp and the substrate. This seal prevents the leakage of temperature control gas into the processing chamber and prevents process gas from reaching the electrostatic clamp and/or causing arcing in the chamber. In addition, by leaving a small gap between the sealing surface of the resilient sealing member and the edge of the electrostatic clamp, a helium distribution channel is created outside the electrostatic clamp top surface thus maximizing available contact area between the substrate and the clamp.

Abstract: A method of hydrogenating poly-Si in an electrical device including the step of placing a substrate having a poly-Si component in a radio frequency induced low pressure, high density plasma reactor. The method further includes the step of introducing into the radio frequency induced low pressure, high density plasma reactor a gas including at least hydrogen or deuterium. The hydrogenation of the poly-Si component is accomplished by striking a plasma in the radio frequency induced low pressure, high density plasma reactor under conditions that promote hydrogenation of the poly-Si component.

Abstract: A lift pin arrangement for use in semiconductor processing apparatus wherein the lift pins are of a shape memory alloy. The lift pins exhibit superelasticity and/or shape memory effects which allows the lift pins to withstand substantial bending forces without permanent deformation thereof, and in the case where the lift pins become deformed it is possible to restraighten the lift pins simply by heating the lift pins to an appropriate temperature.