Abstract: Methods and devices of the invention perform an optical concentration by an expansion of usable spectral width of the incident energy. Preferred methods and devices of the invention concentrate optical energy by tuning it into a narrow spectral width to match the bandgap of another system component, such as an optical fiber, an optical sensor or a photovoltaic device that converts the optical energy. Embodiments of the invention include methods and devices for the spectral concentration of multi-wavelength light and subsequent transport of the concentrated output light.

Abstract: Exemplary methods of maximizing a spur-free dynamic range (SFDR) or a gain of an electro-absorption modulator (EAM) are disclosed. At least one parameter in a set of design parameters for an EAM is varied. An SFDR of the EAM is determined in part by a first set of design parameters. A gain of the EAM is determined in part by a second set of design parameters. An output versus bias voltage transfer curve of the EAM is generated. An optimal SFDR bias voltage at which a maximum SFDR occurs for a given optical input power or an optimal gain bias voltage at which a maximum gain occurs for a given optical input power is programmatically determined based at least in part on the transfer curve.

Abstract: An embodiment of the invention provides a coupled waveguide photo detector device. Optically, the device includes an input waveguide. An output waveguide is coupled to the input waveguide with a nonuniform coupling coefficient in a coupling section. An absorber is included in the coupling section to convert an absorbed portion of optical radiation into photo current. The location of absorber and the optical radiation intensity pattern in the coupling section are set to control the maximum intensity of output power absorbed by the output waveguide to be within a predetermined limit that avoids saturation. The absorber is also part of a transmission line collector which has a phase and group velocity to match those of the optical wave in the coupling section such that currents collected by the transmission line collector add in phase as the optical wave propagates in the output waveguide.

Abstract: The invention provides tunable delay or resonator devices in an electro optical substrate. Signals in at least one waveguide in the electro optical substrate pass through Y-junction reflectors which direct signals from one branch of the waveguide back into another branch of the waveguide. A coupled delay or resonator approximated loop is presented in an embodiment of the invention with opposing Y-junction reflectors. In other embodiments of the invention, a delay ladder is provided with selectable levels of delay from multiple outputs.

Abstract: The invention provides tunable delay or resonator devices in an electro optical substrate. Signals in at least one waveguide in the electro optical substrate pass through Y-junction reflectors which direct signals from one branch of the waveguide back into another branch of the waveguide. A coupled delay or resonator approximated loop is presented in an embodiment of the invention with opposing Y-junction reflectors. In other embodiments of the invention, a delay ladder is provided with selectable levels of delay from multiple outputs.

Abstract: An electra-absorption modulator and electra-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating through the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.

Abstract: An electro-absorption modulator and electro-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating though the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.