Abstract: The invention relates to liquid crystal displays and method of making liquid crystal displays. One liquid crystal display invention has as an element an optically transmissive first substrate that may be positioned to receive light incident from the light source. A reflective second substrate is positioned adjacent to this first substrate. The second substrate has an active area that may include a circuit panel and a perimeter seal area surrounding that active area. To separate the first substrate from the second substrate, spacers are configured about the perimeter seal area of the second substrate. Between the first substrate and the second substrate is a liquid crystal material. Other embodiments are disclosed.

Abstract: The invention relates to liquid crystal displays and method of making liquid crystal displays. One liquid crystal display invention has as an element an optically transmissive first substrate that may be positioned to receive light incident from the light source. A reflective second substrate is positioned adjacent to this first substrate. The second substrate has an active area that may include a circuit panel and a perimeter seal area surrounding that active area. To separate the first substrate from the second substrate, spacers are configured about the perimeter seal area of the second substrate. Between the first substrate and the second substrate is a liquid crystal material. Other embodiments are disclosed.

Abstract: The invention relates to liquid crystal displays and method of making liquid crystal displays. One liquid crystal display invention has as an element an optically transmissive first substrate that may be positioned to receive light incident from the light source. A reflective second substrate is positioned adjacent to this first substrate. The second substrate has an active area that may include a circuit panel and a perimeter seal area surrounding that active area. To separate the first substrate from the second substrate, spacers are configured about the perimeter seal area of the second substrate. Between the first substrate and the second substrate is a liquid crystal material. Other embodiments are disclosed.

Abstract: An insitu image reversal process which uses a sacrificial coating of indium tin oxide and simultaneously deposits amorphous carbon in openings patterned in the ITO while removing the deposited ITO to expose the underlying coating, thereby completing image reversal.

Abstract: A method of making a two-phase charge coupled device (CCD) includes forming a layer of a conductive material over and insulated from the surface of a body of a semiconductor material of one conductivity type having a channel region of the opposite conductivity type in the body and extending to the surface. Sections of a first masking layer are formed on the conductive material layer spaced along the channel region. A conductivity modifying dopant is implanted into the channel region through the spaces between the sections of the first masking layer. A layer of a second masking layer is formed over the sections of the first masking layer and on the surface of the conductive material layer in the spaces between the sections of the first masking layer. A layer of indium-tin oxide (ITO) is formed over the portions of the second masking layer which extend across the ends of the sections of the first masking layer, and a layer of carbon is formed on the second masking layer between the ITO layers.

Abstract: The use of a deposited silicon nitride mask permits higher power to be used when ITO is etched by a plasma containing CH.sub.3. and Ar.sup.+ thereby increasing the etch rate of ITO.

Abstract: ITO is etched by a plasma containing CH.sub.3 .cndot. and Ar.sup.+. Argon ions cause a significant increase in the etch rate.

Abstract: A method of forming a planar ITO gate electrode structure with sub-micron spacing includes forming L-shaped nitride spacer portions.

Abstract: ITO is etched by a plasma containing CH.sub.3. gas.

Abstract: A method for cleaning metallic impurities from a silicon surface of a semiconductor device is described. The first method includes, in sequence, the steps of:(a) exposing the silicon surface for a first time to a plasma afterglow anhydrous cleaning gas mixture containing nitric oxide and hydrogen chloride together with an inert carrier gas to remove metallic impurities, and then either;(b) exposing that surface for a second time to a plasma afterglow gas mixture of a fluorocarbon gas and hydrogen or carbon dioxide to remove the silicon oxynitrochloride film which is formed by step (a), leaving a fluorocarbon polymer film; and(c) exposing the surface for a third time to a plasma afterglow gas of oxygen to remove the fluorocarbon polymer film deposited in step (b); or(d) exposing that surface for a second time to a plasma afterglow gas mixture of inorganic fluorine compound gas, O.sub.2 and carrier gas to remove the silicon oxynitrochlorine film which is formed in step (a).