Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include at least one of hafnium (Hf), samarium (Sm), erbium (Er), neodymium (Nd), tantalum (Ta), lutetium (Lu), europium (Eu), dysposium (Dy), or thulium (Tm).

Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include at least one of hafnium (Hf), samarium (Sm), erbium (Er), neodymium (Nd), tantalum (Ta), lutetium (Lu), europium (Eu), dysposium (Dy), or thulium (Tm).

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.

Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.

Abstract: A neutron detector includes a coincidence detector to detect coincidence events in which each coincidence event indicates proximity in time of a first signal and a second signal. The first signal indicates detection of at least one of a neutron or a gamma ray, and the second signal indicates detection of a gamma ray by a gamma ray detector. A data processor identifies detection of neutron radiation based on characteristics of an energy spectrum of the gamma rays associated with the second signals that correspond to the coincidence signals.

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.

Abstract: Neutrons can be detected using first information derived from a first charge induced on an input electrode of a microchannel plate and second information derived from a second charge induced on an output electrode of the microchannel plate. For example, a ratio between the first charge and the second charge is calculated, a sum of the first and second charges is calculated, and whether a neutron has been detected can be determined based on the ratio and the sum.

Abstract: A device includes a neutron-sensitive composition. The composition includes, in weight percent, a non-zero amount of aluminum oxide (e.g., approximately 1% to approximately 3.5% aluminum oxide), greater than 12% (e.g., approximately 12% to approximately 17%) boron oxide, greater than approximately 60% silicon oxide (e.g., approximately 62% to approximately 68% silicon oxide), and a non-zero amount of sodium oxide (e.g., approximately 10% to approximately 14% sodium oxide). The device is capable of interacting with neutrons to form an electron cascade.

Abstract: An electron multiplier can be fabricated by depositing an electron emissive material on a reticulated substrate, and forming the reticulated substrate into the electron multiplier.

Abstract: A neutron detector includes a coincidence detector to detect coincidence events in which each coincidence event indicates proximity in time of a first signal and a second signal. The first signal indicates detection of at least one of a neutron or a gamma ray, and the second signal indicates detection of a gamma ray by a gamma ray detector. A data processor identifies detection of neutron radiation based on characteristics of an energy spectrum of the gamma rays associated with the second signals that correspond to the coincidence signals.

Abstract: A method includes detecting a neutron based on a time proximity of a first signal and a second signal. The first signal indicates detection of at least one of a neutron and a gamma ray. The second signal indicates detection of a gamma ray. The method further includes measuring an amount of detected gamma rays, for example, an amount different from an amount detected and associated with the second signal.

Abstract: An electron multiplier can be fabricated by depositing an electron emissive material on a reticulated substrate, and forming the reticulated substrate into the electron multiplier.

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.

Abstract: Neutrons can be detected using first information derived from a first charge induced on an input electrode of a microchannel plate and second information derived from a second charge induced on an output electrode of the microchannel plate. For example, a ratio between the first charge and the second charge is calculated, a sum of the first and second charges is calculated, and whether a neutron has been detected can be determined based on the ratio and the sum.

Abstract: An electron multiplier can be fabricated by depositing an electron emissive material on a reticulated substrate, and forming the reticulated substrate into the electron multiplier.