Abstract: Microelectromechanical systems (MEMS) switches are disclosed. Parallel configurations of back-to-back MEMS switches are disclosed in some embodiments. An isolation connection of constant electrical potential may be made to a midpoint of the back-to-back switches. In some embodiments, a separate MEMS switch is provided as a shunt switch for the main MEMS switch. MEMS switch device configurations having multiple switchable signal paths each coupling a common input electrode to a respective output electrode are also disclosed. The MEMS switch device includes shunt switches each coupling a respective output electrode to a reference potential. The presence of a shunt switch coupled to an output electrode enhances the isolation of the signal path corresponding to that output electrode when the path is open.

Abstract: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.

Abstract: Micro-scale devices, such as transformers and capacitors, having a floating conductive layer are disclosed. A floating conductive layer may be disposed in an insulator layer and can reduce a maximum electric field between a first planar conductor and a second planar conductor of a micro-scale passive device. Reduction of a maximum electric field between a first planar conductor and a second planar conductor can reduce undesirable effects on electrical components.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high bandwidth, high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range of values within such range. The isolators may include isolator components galvanically isolated from and capacitively coupled to each other. The sizes and shapes of the isolator components may be configured to control the values of equivalent inductances and capacitances of the isolators to facilitate resonance in operation. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high bandwidth, high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range of values within such range. The isolators may include isolator components galvanically isolated from and capacitively coupled to each other. The sizes and shapes of the isolator components may be configured to control the values of equivalent inductances and capacitances of the isolators to facilitate resonance in operation. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.

Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

Abstract: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.

Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

Abstract: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 20 GHz, not less than 30 GHz, not less than 65 GHz, or between 20 GHz and 100 GHz, including any value or range of values within such range. The isolators may include inductive loops with slits and capacitors integrally formed at the slits. The sizes and shapes of the inductive loops and capacitors may be configured to control the values of equivalent inductances and capacitances of the isolators. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: Micro-scale devices, such as transformers and capacitors, having a floating conductive layer are disclosed. A floating conductive layer may be disposed in an insulator layer and can reduce a maximum electric field between a first planar conductor and a second planar conductor of a micro-scale passive device. Reduction of a maximum electric field between a first planar conductor and a second planar conductor can reduce undesirable effects on electrical components.

Abstract: Isolators having a back-to-back configuration for providing electrical isolation between two circuits are described, in which multiple isolators formed on a single, monolithic substrate are connected in series to achieve a higher amount of electrical isolation for a single substrate than for isolators formed on separate substrates connected in series. Discrete dielectric regions positioned between isolator components forming an isolator provide electrical isolation between the isolator components as well as between the isolators formed on the substrate. The back-to-back isolator may provide one or more communication channels for transfer of information and/or power between different circuits.

Abstract: A wireless sensor node is described. The wireless sensor node may include a wake-up circuitry configured to awaken the sensor when a request is received. The sensor may be placed in a sleep mode, thus saving battery usage until a wake-up signal requesting use of the sensor is received. Powering of the wake-up circuitry may be supplied through energy captured using an energy harvester. In one example, the energy for powering the wake-up circuitry is extracted from the same signal used for awakening the sensor. The wireless sensor mode may operate in a passive mode, in which the energy for powering the wake-up circuitry is harvested, or in a power supply-assisted mode, in which some of the power is provided by a power supply. High quality factors filters may be used to increase the signal-to-noise ratio of the wake-up signals, thus improving the node's ability to recognize activation requests.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 20 GHz, not less than 30 GHz, not less than 65 GHz, or between 20 GHz and 100 GHz, including any value or range of values within such range. The isolators may include inductive loops with slits and capacitors integrally formed at the slits. The sizes and shapes of the inductive loops and capacitors may be configured to control the values of equivalent inductances and capacitances of the isolators. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

Abstract: A wireless sensor node is described. The wireless sensor node may include a wake-up circuitry configured to awaken the sensor when a request is received. The sensor may be placed in a sleep mode, thus saving battery usage until a wake-up signal requesting use of the sensor is received. Powering of the wake-up circuitry may be supplied through energy captured using an energy harvester. In one example, the energy for powering the wake-up circuitry is extracted from the same signal used for awakening the sensor. The wireless sensor mode may operate in a passive mode, in which the energy for powering the wake-up circuitry is harvested, or in a power supply-assisted mode, in which some of the power is provided by a power supply. High quality factors filters may be used to increase the signal-to-noise ratio of the wake-up signals, thus improving the node's ability to recognize activation requests.

Abstract: A microelectromechanical system (MEMS) device is provided that includes a substrate having a dielectric cavity formed therein and a movable electromechanical device suspended in the dielectric cavity. The dielectric cavity includes a substantially planar bottom surface and at least one sidewall surface extending substantially perpendicularly from the bottom surface. The movable electromechanical device is suspended in the dielectric cavity such that the movable electromechanical device is spaced apart from the bottom surface and the at least one sidewall surface of the dielectric cavity. The bottom surface of the cavity and each of the at least one sidewall surface of the cavity meet at a rectilinear corner.

Abstract: Suspended microelectromechanical systems (MEMS) devices including a stack of one or more materials over a cavity in a substrate are described. The suspended MEMS device may be formed by forming the stack, which may include one or more electrode layers and an active layer, over the substrate and removing part of the substrate underneath the stack to form the cavity. The resulting suspended MEMS device may include one or more channels that extend from a surface of the device to the cavity and the one or more channels have sidewalls with a spacer material. The cavity may have rounded corners and may extend beyond the one or more channels to form one or more undercut regions. The manner of fabrication may allow for forming the stack layers with a high degree of planarity.

Abstract: A microelectromechanical system (MEMS) device is provided that includes a substrate having a dielectric cavity formed therein and a movable electromechanical device suspended in the dielectric cavity. The dielectric cavity includes a substantially planar bottom surface and at least one sidewall surface extending substantially perpendicularly from the bottom surface. The movable electromechanical device is suspended in the dielectric cavity such that the movable electromechanical device is spaced apart from the bottom surface and the at least one sidewall surface of the dielectric cavity. The bottom surface of the cavity and each of the at least one sidewall surface of the cavity meet at a rectilinear corner.