Abstract: A series select transistor and a source select transistor are connected in series at the end of a NAND string of floating gate data storage transistors. The floating gates, the series select gate, and the source select gate are all preferably formed of polysilicon. The same tunnel oxide layer is used as gate oxide for the series select transistor and source select transistor as well as for the floating gate data storage transistors. Two layers of polysilicon in the series select gate and the source select gates are tied together. The series select transistor is tied to the last transistor in the NAND string. The source select transistor is tied to the array Vss supply. In order to program inhibit a specific NAND cell during the programming of another NAND cell, the gate of the series select transistor is raised to Vcc, while the gate of the source select transistor is held to ground.

Abstract: A process and materials are described in which highly refined cellulose fibers are broken down into microfibers and further processed into compositions, films, coatings and solid materials which are biodegradable and even edible. The process for the formation of hardenable compositions may comprise providing a composition comprising highly refined non-wood cellulose fiber, mechanically reducing the size of the non-wood cellulose fiber to less than 2 mm, reducing the amount of binding of microfibers by lignin within said non-wood cellulose fibers present in said composition comprising cellulose fiber to form a first fiber product, providing pressure of at least 300 psi to said first fiber product while it is in the presence of a liquid, and removing said pressure within a time interval which will cause said cellulose fiber to break down into a second fiber product comprising microfibers in said liquid.