Abstract: A method is provided for applying a laser marking to a sheet of material forming a capsule from portions of the sheet of material using a pair of die rollers wherein the location of the laser marking is established such that it does not overlap at least one of a seal between the pair of sheets of material formed during the formation of the capsule.

Abstract: The invention relates to a water-dispersible polyurethane (meth)acrylate U substantially synthesised from at least one multifunctional aromatic or (cyclo)aliphatic isocyanate I, at least one (cyclo)aliphatic diol H2 having a number of carbon atoms of from two to twenty, at least one (cyclo)aliphatic triol H3 having a number of carbon atoms of from three to twenty, an aliphatic hydroxyacid A having at least two carbon atoms, at least one hydroxyl group, and at least one acid group which may be a carboxyl group, a sulfonic acid group, or a phosphoric or phosphonic acid group, and at least one component R having at least one isocyanate-reactive group and at least one radically polymerisable olefinically unsaturated group, at least one base B for at least partial neutralisation of the acid groups of component A, and a catalyst C for urethane formation which is a salt or a chelate complex of a metal of any of groups 3 to 15 of the Periodic System of the Elements, to a process for its preparation, and to the use th

Abstract: A method includes identifying sets of part data associated with substrate processing equipment. Each of the sets of part data includes corresponding part values and a corresponding part identifier. Each of the sets of part data is associated with hardware parameters of a corresponding equipment part of substrate processing equipment. The method further includes generating sets of aggregated data. Each of the sets of aggregated data includes a corresponding set of part data of the sets of part data and a corresponding set of additional non-part data of sets of non-part data. The method further includes causing, based on the sets of aggregated data, performance of a corrective action associated with the substrate processing equipment.

Abstract: A method includes receiving part data associated with a corresponding part of substrate processing equipment, sensor data associated with one or more corresponding substrate processing operations performed by the substrate processing equipment to produce one or more corresponding substrates, and metrology data associated with the one or more corresponding substrates produced by the one or more corresponding substrate processing operations performed by the substrate processing equipment that includes the corresponding part. The method further includes generating sets of aggregated part-sensor-metrology data including a corresponding set of part data, a corresponding set of sensor data, and a corresponding set of metrology data. The method further includes causing analysis of the sets of aggregated part-sensor-metrology data to generate one or more outputs to perform a corrective action associated with the corresponding part of the substrate processing equipment.

Abstract: This invention relates to a new stationary phase carrying functional groups comprising a halogen substituted aromatic ring. Target molecules can interact with this stationary phase by halogen bonding. The stationary phase is suitable for SPE or chromatographic separations.

Abstract: A method includes receiving part data associated with a corresponding part of substrate processing equipment, sensor data associated with one or more corresponding substrate processing operations performed by the substrate processing equipment to produce one or more corresponding substrates, and metrology data associated with the one or more corresponding substrates produced by the one or more corresponding substrate processing operations performed by the substrate processing equipment that includes the corresponding part. The method further includes generating sets of aggregated part-sensor-metrology data including a corresponding set of part data, a corresponding set of sensor data, and a corresponding set of metrology data. The method further includes causing analysis of the sets of aggregated part-sensor-metrology data to generate one or more outputs to perform a corrective action associated with the corresponding part of the substrate processing equipment.

Abstract: The invention relates to a water-dispersible polyurethane (meth)acrylate U substantially synthesised from at least one multifunctional aromatic or (cyclo)aliphatic isocyanate I, at least one (cyclo)aliphatic diol H2 having a number of carbon atoms of from two to twenty, at least one (cyclo)aliphatic triol H3 having a number of carbon atoms of from three to twenty, an aliphatic hydroxyacid A having at least two carbon atoms, at least one hydroxyl group, and at least one acid group which may be a carboxyl group, a sulfonic acid group, or a phosphoric or phosphonic acid group, and at least one component R having at least one isocyanate-reactive group and at least one radically polymerisable olefinically unsaturated group, at least one base B for at least partial neutralisation of the acid groups of component A, and a catalyst C for urethane formation which is a salt or a chelate complex of a metal of any of groups 3 to 15 of the Periodic System of the Elements, to a process for its preparation, and to the use th

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.

Abstract: A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: A method of controlling wafer temperature in a plasma reactor by obtaining the next scheduled change in RF heat load on the workpiece, and using thermal modeling to estimate respective changes in wafer backside gas pressure and in coolant flow through a wafer support pedestal that would compensate for the next scheduled change in RF heat load, and making the respective changes in the backside gas pressure or in the coolant flow prior to the time of the next scheduled change.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas.

Abstract: A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions.

Abstract: A triple-sensor motion detector is provided for illuminating the approach to a display case or other object. The triple-sensor motion detector provides a field of detection that spans the front width of the case, yet does not include the areas along the sides of the case. The detector reduces inadvertent triggering of the illumination by persons approaching the side of the case or approaching another case on the other side of an aisle.

Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries.

Abstract: A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: A method of controlling the temperature of a workpiece on a workpiece support in a plasma reactor includes placing coolant in a flow channel thermally coupled to the workpiece support, supporting a thermally conductive gas between the workpiece and the workpiece support to establish a backside gas pressure, providing sensors to measure the temperature of the workpiece support and the workpiece, and determining whether the rate of change in workpiece temperature is less or more than a rate limited by a thermal mass of the workpiece support. If the rate is less or equal, the thermal conditions of the coolant in the flow channel are changed to reduce a difference between the measured workpiece support temperature and a target workpiece support temperature. If the rate is more, the pressure of the thermally conductive gas is changed to reduce a difference between the measured workpiece temperature and a target workpiece temperature.