Patents by Inventor Paul M. Deluca
Paul M. Deluca has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080121269Abstract: A photovoltaic (PV) device comprises at least one PV lamp that includes at least one solar cell chip that generates an electrical current upon exposure to light, and an epoxy lens that encapsulates the solar cell chip, the epoxy lens concentrating incident light onto the solar cell chip. A method of manufacturing a PV device that includes at least one PV lamp comprises fabricating at least one solar cell chip that generates an electrical current upon exposure to light, and forming an epoxy lens that encapsulates the solar cell chip, the epoxy lens concentrating incident light onto the solar cell chip, to thereby form the PV lamp.Type: ApplicationFiled: August 22, 2007Publication date: May 29, 2008Inventors: Roger E. Welser, Paul M. DeLuca, William T. Roberts
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Patent number: 7345327Abstract: A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.Type: GrantFiled: October 20, 2004Date of Patent: March 18, 2008Assignee: Kopin CorporationInventors: Roger E. Welser, Paul M. DeLuca, Charles R. Lutz, Kevin S. Stevens, Noren Pan
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Patent number: 7186624Abstract: A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.Type: GrantFiled: April 14, 2004Date of Patent: March 6, 2007Assignee: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Noren Pan
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Patent number: 7115466Abstract: A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III–V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.Type: GrantFiled: January 20, 2005Date of Patent: October 3, 2006Assignee: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Charles R. Lutz, Kevin S. Stevens, Noren Pan
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Patent number: 6847060Abstract: A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.Type: GrantFiled: April 10, 2002Date of Patent: January 25, 2005Assignee: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Charles R. Lutz, Kevin S. Stevens
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Patent number: 6800879Abstract: InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.Type: GrantFiled: January 8, 2002Date of Patent: October 5, 2004Assignee: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Barbara E. Landini
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Patent number: 6750480Abstract: A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.Type: GrantFiled: November 27, 2001Date of Patent: June 15, 2004Assignee: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Noren Pan
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Publication number: 20020163014Abstract: A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.Type: ApplicationFiled: April 10, 2002Publication date: November 7, 2002Applicant: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Charles R. Lutz, Kevin S. Stevens
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Publication number: 20020125498Abstract: InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.Type: ApplicationFiled: January 8, 2002Publication date: September 12, 2002Applicant: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Barbara E. Landini
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Publication number: 20020121674Abstract: A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.Type: ApplicationFiled: November 27, 2001Publication date: September 5, 2002Applicant: Kopin CorporationInventors: Roger E. Welser, Paul M. Deluca, Noren Pan
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Patent number: 5668371Abstract: A method of proton tomotherapy provides uniform dose placement within a tumorous area on a slice by slice basis by locating a Bragg peak of the proton beam at the distal edge of the tumor and irradiating the tumor from a number of different angles without sweeping the range of the protons at the given angle. Uniform dose is provided by simultaneous intensity modulation of the beams. Treatment of the tumor in slices eliminates the need for a rotating gantry but allows the patient to be rotated instead. Accurate range placement is provided by a preliminary proton verification tomogram obtainable on the same equipment. A set of standard blocks permits this technique to be used with standard irradiation zones without additional range or intensity adjusting mechanism.Type: GrantFiled: October 1, 1996Date of Patent: September 16, 1997Assignee: Wisconsin Alumni Research FoundationInventors: Joseph O. Deasy, Thomas R. Mackie, Paul M. DeLuca, Jr.