Patents by Inventor Paul M. Feeney
Paul M. Feeney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8741009Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.Type: GrantFiled: July 29, 2009Date of Patent: June 3, 2014Assignee: Cabot Microelectronics CorporationInventors: Jeffrey M. Dysard, Paul M. Feeney, Sriram P. Anjur, Timothy P. Johns, Yun-Biao Xin, Li Wang
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Patent number: 7998335Abstract: The invention relates to a method of polishing a substrate comprising at least one metal layer by applying an electrochemical potential between the substrate and at least one electrode in contact with a polishing composition comprising a reducing agent or an oxidizing agent.Type: GrantFiled: June 13, 2005Date of Patent: August 16, 2011Assignee: Cabot Microelectronics CorporationInventors: Paul M. Feeney, Vlasta Brusic
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Patent number: 7837888Abstract: The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.Type: GrantFiled: November 13, 2006Date of Patent: November 23, 2010Assignee: Cabot Microelectronics CorporationInventors: Paul M. Feeney, Sriram Anjur, Jeffrey M. Dysard
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Publication number: 20090289033Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.Type: ApplicationFiled: July 29, 2009Publication date: November 26, 2009Inventors: Jeffrey M. Dysard, Paul M. Feeney, Sriram P. Anjur, Timothy P. Johns, Yun-Biao Xin, Li Wang
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Patent number: 7585340Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.Type: GrantFiled: April 27, 2006Date of Patent: September 8, 2009Assignee: Cabot Microelectronics CorporationInventors: Jeffrey M. Dysard, Paul M. Feeney, Sriram P. Anjur, Timothy P. Johns, Yun-Biao Xin, Li Wang
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Publication number: 20080105652Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic surfactant, calcium ion or magnesium ion, a corrosion inhibitor for copper, and water, wherein the pH of the polishing composition is about 6 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.Type: ApplicationFiled: November 2, 2006Publication date: May 8, 2008Applicant: Cabot Microelectronics CorporationInventors: Vlasta Brusic, Renjie Zhou, Christopher C. Thompson, Paul M. Feeney
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Patent number: 6841479Abstract: The invention provides a method of reducing in-trench smearing during polishing. The method comprises providing a substrate comprising a first layer comprising an insulating material, a second layer comprising a filling material, and a plurality of field and trench regions. A polymeric material is infiltrated over the substrate, wherein the polymeric material fills the trench regions and covers the field regions. The polymeric material optionally is removed from the field regions, followed by baking of the substrate such that the polymeric material in the trench regions becomes recessed below the insulating material of the field regions. The substrate is then subjected to a temperature of about 100° C. or more for about 30 minutes or longer, such that during polishing of the substrate, smearing of the filling material in the trench regions is reduced as compared to polishing of the substrate under the same conditions except for subjecting the substrate to the temperature of about 100° C.Type: GrantFiled: April 10, 2002Date of Patent: January 11, 2005Assignee: Cabot Microelectronics CorporationInventors: Isaac K. Cherian, Paul M. Feeney, Kevin J. Moeggenborg
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Patent number: 6726534Abstract: The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.Type: GrantFiled: February 28, 2002Date of Patent: April 27, 2004Assignee: Cabot Microelectronics CorporationInventors: Gregory H. Bogush, Jeffrey P. Chamberlain, Paul M. Feeney, Brian L. Mueller, David J. Schroeder, Alicia F. Walters
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Patent number: 6632377Abstract: Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.Type: GrantFiled: September 30, 1999Date of Patent: October 14, 2003Assignee: International Business Machines CorporationInventors: Vlasta Brusic, Daniel C. Edelstein, Paul M. Feeney, William Guthrie, Mark Jaso, Frank B. Kaufman, Naftali Lustig, Peter Roper, Kenneth Rodbell, David B. Thompson
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Patent number: 6503827Abstract: A method of reducing the planarization defects produced during the manufacture of semiconductor devices. A sacrificial layer, having defects produced during a interconnection feature planarization step, is removed prior to the formation of subsequent layers to reduce the replication of unwanted defects.Type: GrantFiled: June 28, 2000Date of Patent: January 7, 2003Assignee: International Business Machines CorporationInventors: Susan G. Bombardier, Paul M. Feeney, Robert M. Geffken, David V. Horak, Matthew J. Rutten
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Patent number: 6495917Abstract: A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.Type: GrantFiled: March 17, 2000Date of Patent: December 17, 2002Assignee: International Business Machines CorporationInventors: John J. Ellis-Monaghan, Paul M. Feeney, Robert M. Geffken, Howard S. Landis, Rosemary A. Previti-Kelly, Bette L. Bergman Reuter, Matthew J. Rutten, Anthony K. Stamper, Sally J. Yankee
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Publication number: 20020151177Abstract: The invention provides a method of reducing in-trench smearing during polishing. The method comprises providing a substrate comprising a first layer comprising an insulating material, a second layer comprising a filling material, and a plurality of field and trench regions. A polymeric material is infiltrated over the substrate, wherein the polymeric material fills the trench regions and covers the field regions. The polymeric material optionally is removed from the field regions, followed by baking of the substrate such that the polymeric material in the trench regions becomes recessed below the insulating material of the field regions. The substrate is then subjected to a temperature of about 100° C. or more for about 30 minutes or longer, such that during polishing of the substrate, smearing of the filling material in the trench regions is reduced as compared to polishing of the substrate under the same conditions except for subjecting the substrate to the temperature of about 100° C.Type: ApplicationFiled: April 10, 2002Publication date: October 17, 2002Applicant: Cabot Microelectrics CorporationInventors: Isaac K. Cherian, Paul M. Feeney, Kevin J. Moeggenborg
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Patent number: 6426558Abstract: A method and structure is described which improves the manufacturability of integrated circuit interconnect and stud contacts in contact with semiconductor substrates and upper levels of metallization. The monolithic structure is formed from a thick layer of refractory metal. A variation in the monolithic structure is in the use of a dual damascene local interconnect portion of the structure which allows the local interconnect to pass over structures previously formed on the substrate.Type: GrantFiled: May 14, 2001Date of Patent: July 30, 2002Assignee: International Business Machines CorporationInventors: Jonathan Chapple-Sokol, Paul M. Feeney, Robert M. Geffken, David V. Horak, Mark P. Murray, Anthony K. Stamper
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Patent number: 6355565Abstract: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate, liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.Type: GrantFiled: July 12, 2001Date of Patent: March 12, 2002Assignee: International Business Machines CorporationInventors: Paul M. Feeney, Timothy C. Krywanczyk, Lawrence D. David, Matthew T. Tiersch, Eric J. White
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Patent number: 6350393Abstract: Chemical mechanical polishing compositions including an abrasive and cesium hydroxide and methods for polishing dielectric layers associated with integrated circuits using cesium hydroxide containing polishing compositions.Type: GrantFiled: November 4, 1999Date of Patent: February 26, 2002Assignee: Cabot Microelectronics CorporationInventors: Alicia F. Francis, Brian L. Mueller, James A. Dirksen, Paul M. Feeney
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Publication number: 20010052587Abstract: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate, liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.Type: ApplicationFiled: July 12, 2001Publication date: December 20, 2001Applicant: International Business Machines CorporationInventors: Paul M. Feeney, Timothy C. Krywanczyk, Lawrence D. David, Matthew T. Tiersch, Eric J. White
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Publication number: 20010051433Abstract: Chemical mechanical polishing compositions including an abrasive and cesium hydroxide and methods for polishing dielectric layers associated with integrated circuits using cesium hydroxide containing polishing compositionsType: ApplicationFiled: November 4, 1999Publication date: December 13, 2001Inventors: Alicia F. Francis, Brian L. Mueller, James A. Dirksen, Paul M. Feeney
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Publication number: 20010037821Abstract: The present invention provides a method of polishing and/or cleaning a substrate using a multi-component polishing and/or cleaning composition, wherein the components of the polishing and/or cleaning composition are mixed at the point-of-use or immediately before delivery to the point-of-use. The present invention also provides a method of polishing and/or cleaning more than one substrate simultaneously using a single apparatus, wherein a different polishing or cleaning composition is delivered to each substrate.Type: ApplicationFiled: April 9, 2001Publication date: November 8, 2001Inventors: Bradley J. Staley, Gregory H. Bogush, Jeffrey P. Chamberlain, Paul M. Feeney, Alicia F. Walters, Steven K. Grumbine, Brian L. Mueller, David J. Schroeder
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Patent number: 6294105Abstract: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.Type: GrantFiled: December 23, 1997Date of Patent: September 25, 2001Assignee: International Business Machines CorporationInventors: Paul M. Feeney, Timothy C. Krywanczyk, Lawrence D. David, Matthew T. Tiersch, Eric J. White
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Patent number: 6007411Abstract: A wafer carrier for chemical mechanical polishing. The carrier has a notch where wafers are placed for polishing and a ledge around the notch. An outer rim extends from the ledge and, during polishing, below the polished wafer compressing a polishing pad therebelow. Slurry is provided to the polishing pad, during polishing, by slurry channels through the carrier into the ledge. Excess slurry exits through the pad or, optionally, through a plurality of exit channels through the rim.Type: GrantFiled: June 19, 1997Date of Patent: December 28, 1999Assignee: Interantional Business Machines CorporationInventor: Paul M. Feeney