Abstract: The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.

Abstract: The invention is directed to method of preparing metal fluoride single crystals and particularly to crystals where the metal is calcium, barium, magnesium or strontium, or a mixture thereof. The invention uses a decreasing fast cooling profile and an increasing slow cooling profile for the hot zone and the cold zone, respectively, after crystal formation during cooling from melt temperatures to a first temperature. A substantially constant cooling rate is then applied to the both zones during cooling from the first temperature to a final temperature, usually room temperature. It has been found that the substantially constant cooling rate during the annealing process results in crystals having improved homogeneity and birefringence.

Abstract: The invention provides an ultraviolet lithography method/system. The lithography method and system include providing a below 200 nm radiation source, providing a photolytically improved transmitting fused silica glass lithography optical element, transmitting below 200 nm photons through said photolytically improved transmitting fused silica glass lithography optical element to form a lithography pattern which is reduced and projected onto a radiation sensitive lithography printing medium to form a printed lithography pattern. Providing the photolytically improved transmitting fused silica glass lithography optical element includes providing a photolytically improved transmitting fused silica glass lithography optical element preform body and forming the photolytically improved transmitting fused silica glass lithography optical element preform into said lithography optical element.

Abstract: The invention provides an ultraviolet lithography method/system. The lithography method and system include providing a below 200 nm radiation source, providing a photolytically improved transmitting fused silica glass lithography optical element, transmitting below 200 nm photons through said photolytically improved transmitting fused silica glass lithography optical element to form a lithography pattern which is reduced and projected onto a radiation sensitive lithography printing medium to form a printed lithography pattern. Providing the photolytically improved transmitting fused silica glass lithography optical element includes providing a photolytically improved transmitting fused silica glass lithography optical element preform body and forming the photolytically improved transmitting fused silica glass lithography optical element preform into said lithography optical element.

Abstract: The invention is directed to method of preparing metal fluoride single crystals and particularly to crystals where the metal is calcium, barium, magnesium or strontium, or a mixture thereof. The invention uses a decreasing fast cooling profile and an increasing slow cooling profile for the hot zone and the cold zone, respectively, after crystal formation during cooling from melt temperatures to a first temperature. A substantially constant cooling rate is then applied to the both zones during cooling from the first temperature to a final temperature, usually room temperature. It has been found that the substantially constant cooling rate during the annealing process results in crystals having improved homogeneity and birefringence.

Abstract: A method of making an oriented calcium fluoride single crystal includes loading calcium fluoride feedstock on top of a seed crystal having a specific crystallographic orientation, heating the calcium fluoride feedstock to a temperature sufficient to form a melt, and growing a calcium fluoride crystal on the seed crystal by progressively moving the melt and the seed crystal through a temperature gradient zone having an axial temperature gradient in a range from approximately 2° C./cm to approximately 8° C./cm, wherein a growth direction of the calcium fluoride crystal substantially conforms to the crystallographic orientation of the seed crystal.

Abstract: In furnaces for producing high purity fused silica glass boules, the refractory in the area of the burner holes reaches such elevated temperatures that cause impurities to leach out and the dissociation of the refractory, causing contamination of the silica glass. In order to reduce the temperature of the burner hole refractory, a porous insert or liner is positioned within the burner hole and a suitable gas is supplied thereto. The gas diffuses through the porous liner and not only cools the liner and refractory, but also forms a boundary layer along an inside surface of the insert that prevents particle buildup. The cooling of the insert and surrounding burner hole refractory prevents contamination of the silica glass from the refractory.

Abstract: The invention provides an ultraviolet lithography method/system. The lithography method and system include providing a below 200 nm radiation source, providing a photolytically improved transmitting fused silica glass lithography optical element, transmitting below 200 nm photons through said photolytically improved transmitting fused silica glass lithography optical element to form a lithography pattern which is reduced and projected onto a radiation sensitive lithography printing medium to form a printed lithography pattern. Providing the photolytically improved transmitting fused silica glass lithography optical element includes providing a photolytically improved transmitting fused silica glass lithography optical element preform body and forming the photolytically improved transmitting fused silica glass lithography optical element preform into said lithography optical element.

Abstract: Fused silica boules (19) having improved off-axis homogeneity are produced by controlling the air flow around the boule (19) during its formation. The boule is formed in a containment vessel (13) which collects soot from a plurality of burners (14). The containment vessel (13) rotates and oscillates relative to the burners (14) as the boule (19) is formed. Surrounding the containment vessel (13) is an air flow wall (130) which oscillates with the containment vessel (13). The air flow wall (130) is spaced from the containment vessel (13) by a gap (175) through which air flows during boule formation. The dimensions of this gap (175) remain constant as the boule is formed. Surrounding the air flow wall (130) is a stationary wall (160). The stationary wall (160) is spaced from the air flow wall (130) by a gap (165) whose dimensions change as the boule is formed. A motion accommodating seal (155) blocks air flow in this gap (165).

Abstract: This invention is directed to the production of essentially defect-free high purity fused silica glass articles, the method comprising the following steps: (a) forming a green body from silica particulates or a porous body of amorphous silica; (b) sintering said body in a chamber by raising the temperature of the chamber to above 1720.degree. C., while purging the chamber with helium or applying a vacuum to the chamber; and (c) consolidating the sintered body in a chamber by raising the temperature within the chamber to at least 1750.degree. C., introducing an inert gas into the chamber at a pressure less than about 6.9 MPa (1000 psig), and cooling the chamber while maintaining the pressurized atmosphere to a temperature at least below the annealing point of the glass. In the most preferred practice, a green body of silica particulates will be prepared via a sol-gel process.

Abstract: A method for consolidating a green body is disclosed which involves: (1) drying and partially sintering the green body at a temperature above about 1000.degree. C. and in an atmosphere containing chlorine; (2) fully sintering the green body under vacuum at a temperature above about 1720.degree. C.; and (3) hot isostatic pressing ("hipping") the green body at a temperature above about 1150.degree. C. and at a pressure above about 100 psig. The process produces glass articles which have a low water content and are essentially bubble free.This is a continuation of co-pending application Ser. No. 07/271,709 filed Nov. 16, 1988, now abandoned which is a divisional application of application Ser. No. 07/052,619, filed May 20, 1987 now U.S. Pat. No. 4,789,389.

Abstract: Compositions for encapsulating electronic components are provided which comprise a blend of a curable resin and an ultra-pure silica filler. The filler is composed of fused silica granules which are prepared from a gel of a silicon-containing organic compound, such as TEOS, and which have a uranium content of less than about 0.1 parts per billion and a thorium content of less than about 0.5 parts per billion. The compositions can be readily manufactured in commercial quantities at reasonable costs and are particular well-suite for encapsulating components, such as, high density RAMs, which are sensitive to alpha particles.

Abstract: A method for producing ultra-high purity, optical quality, glass articles is disclosed which involves: (1) forming a gel from a silicon-containing organic compound, such as, TEOS; (2) drying the gel to produce granules having a mean particle size of less than about 1 millimeter; (3) fully sintering the granules to produce high purity, artificial sand; (4) casting the artificial sand by conventional techniques, such as, slip casting, to form a high density, porous, green body; (5) drying and partially sintering the green body; (6) fully sintering the green body under vacuum; and (7) hot isostatic pressing ("hipping") the green body. The glass articles produced by the process have higher purity, greater homogeneity, and less IR absorption than existing, commercially available, premium quality, fused silica, glass articles.