Abstract: Embodiments of disclosure include an apparatus for high-temperature crystal growth. The apparatus can include a pressure vessel having a capsule that has an interior surface that defines an internal capsule volume, a fill tube that comprises an outer surface and an inner surface, wherein an interior fill tube volume defined by the inner surface is in fluid communication with the internal capsule volume of the capsule, a sleeve axially surrounding the outer surface of the fill tube, wherein the sleeve is configured to support the outer surface of the fill tube, along the length of the fill tube, during a high-temperature crystal growth process, and a manifold comprising an interior manifold volume that is in fluid communication with the interior fill tube volume of the fill tube.

Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates.

Abstract: Embodiments of the disclosure include a temperature control assembly for performing a crystal growth process. The temperature control assembly will include one or more temperature distribution units (TDUs) coupled to an end cap of a capsule.

Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates.

Abstract: Embodiments of the disclosure include a thermal insulation structure, comprising a plurality of stacked layers that include a first layer and a second layer. The first layer includes a first surface, a second surface, disposed opposite of the first surface, and a plurality of perforations extending between the first surface and the second surface, wherein the plurality of perforations comprise a first pattern of two or more perforations that form a patterned in a first direction that is parallel to the first surface. The second layer includes a third surface, wherein the third surface is in contact with the second surface of the first layer, a fourth surface, disposed opposite of the third surface, and a plurality of perforations extending between the third surface and the fourth surface, wherein the plurality of perforations comprise a second pattern of two or more perforations that form a pattern in the first direction that is parallel to the third surface.

Abstract: Embodiments of the disclosure include a crystal growth apparatus, comprising a cylindrical-shaped enclosure, a primary liner disposed within the cylindrical-shaped enclosure, wherein the primary liner comprises a cylindrical wall that extends between a first end and a second end, and an interior surface of the primary liner defines an interior region, at least one load-bearing annular insulating member disposed between the cylindrical-shaped enclosure and the primary liner, a plurality of heating elements disposed between the primary liner and the at least one load-bearing annular insulating member, at least one end closure member disposed proximate to a first end of the cylindrical-shaped enclosure, and a primary liner lid disposed proximate to the first end of the cylindrical wall of the primary liner.

Abstract: Embodiments of the disclosure can include an apparatus for solvothermal crystal growth. The apparatus can include a cylindrical shaped enclosure, a cylindrical heater, a first end closure member, a load-bearing annular insulating member, and a first end plug. The cylindrical heater includes a first end, a second end and a cylindrical wall that extends between the first end and the second end, wherein an interior surface of the cylindrical wall defines a capsule region. The first end closure member is disposed proximate to the first end of the cylindrical heater, the first end closure member being configured to provide axial support for a capsule disposed within the capsule region. The load-bearing annular insulating member is disposed between an inner surface of the cylindrical shaped enclosure and an outer surface of the cylindrical wall of the cylindrical heater. The first end plug is disposed between the first end of the cylindrical heater and the first end closure.

Abstract: Embodiments of the disclosure an apparatus for solvothermal crystal growth, comprising: a pressure vessel having a cylindrical shape and a vertical orientation; a cylindrical heater having an upper zone and a lower zone that can be independently controlled; at least one end heater; and an inward-facing surface of a baffle placed within 100 millimeters of a bottom end or top end surface of the growth chamber. The end heater is configured to enable: a variation in the temperature distribution along a first surface to be less than about 10° C., and a variation in the temperature distribution along a second surface to be less than about 20° C., during a crystal growth process.

Abstract: A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to