Abstract: A slide assembly adapted for use with a projector body, having a projector body, having a light source, an optical system and a chamber in which an image forming element can be placed. The slide assembly has a housing adapted to be positioned over the slide projector body with an active matrix display slide movably mounted to housing with a storage position in the housing and an operating position outside the housing. In the operating position the display slide is positioned in a slide projector chamber for projection of an image onto an external viewing surface.

Abstract: A display panel is formed using a single crystal thin-film material that may be transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract: A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is than incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract: The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of high density and complexity. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in modules.

Abstract: A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is than incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Abstract: The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Abstract: A method and apparatus for reducing branching, reducing defects, and improving the overall surface morphology of silicon on insulator (SOI) structures produced by Zone Melting and Recrystallization (ZMR) is described. A special heater for use in preparing SOI structures formed by ZMR comprises a graphite mass having corrugations extending along one or more side walls and which may be periodic. The heater provides concentrated regions of heat which vary periodically across the length of the molten zone of the SOI structure. Alternatively, the heater comprises a stationary lower heater member upon which the wafer is placed and a movable upper heater member having corrugations. ZMR is achieved by translating the corrugated upper heater member past the wafer. In yet another alternative, a well known strip heater having a uniformly shaped movable upper member is improved by replacing the upper member with a movable upper heater member having corrugations.

Abstract: A photovoltaic device utilizing compound semiconductor materials that are stable when operated at high temperatures. Hostile environments, and in particular, thermally stressful environments such as those generated by use of light concentrating systems, require encapsulation of the device. Sealing of the photo-active junction, the conductive grid, the exposed semiconductor surfaces, and the pads contacting the grid away from the junction area provide such thermal stability. A heterojunction structure can be used along with barrier materials providing a conductive grid in contact with the photo-active surface thereby reducing interdiffusion of that surface with the conductive grid.

Abstract: The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Abstract: The improved zone-melt recrystallization apparatus is comprised of a heating element having a plurality of individually controllable heating elements. The elements are heated in sequence to generate a melted zone within a semiconductor material which is translated across the material by heating then cooling adjacent heating elements to recrystallize the material.

Abstract: The improved zone-melt recrystallization apparatus is comprised of a port system for providing a thermal barrier between the recrystallization chamber and the loader assembly. A bellows system is used to lift a plurality of pins that support a silicon wafer being recrystallized. Flexure supports are designed to constrain the motion of the pins within the desired direction of motion of the wafer.

Abstract: A method for reducing defects after zone melting and recrystallization of semiconductor films formed on an insulator over a semiconductor substrate by selectively removing portion of a first layer over the semiconductor film, amorphizing the exposed film portion and laterally regrowing the amorphized region.

Abstract: An monolithic integrated transceiver formed on an Si substrate comprising: a III-V compound light source, a III-V compound light detector and a pyramidal groove formed in the substrate for aligning an optical fiber with said transmitter.

Abstract: A micromechanical electric shunt is fabricated by micromachining according to recent IC fabrication procedures. A plurality of such shunts is incorporated on a single substrate to form novel process station or post identification or signature encoding apparatus for use on a telecommunications bus or the equivalent. Such identification of signature encoding apparatus may be configured for conventional binary coding. Both frequency and current derivative mode apparatus are disclosed.

Abstract: An improved method of forming seed openings for zone-melting and recrystallization of polysilicon film on an insulator over silicon (SOI) is described. This method comprises forming a narrow discontinuous pattern of seed openings formed by an overlapping sub-pattern of discontinuous shaped openings. Alternatively, in an edge bead seed embodiment, a resist is removed from an SOI precursor structure, comprising an insulator on an Si wafer, thus exposing the peripheral edge of the insulator. The exposed insulator is then also removed to provide a peripheral edge seed opening to the underlying Si wafer.

Abstract: A monolithic integrated structure in which a compound semiconductor (III-V or II-VI material) optoelectronic device (laser) is formed in the shape of a mesa-like structure projecting from an etch pit in an Si substrate. A method for sonically removing cantilevered beams formed on said optoelectronic device, to provide laser end facets, is also described.

Abstract: An optical device formed on an Si substrate comprising: a III-V optical transmitter formed on the Si substrate, a silicon device formed in or on, the Si substrate and an alignment groove formed in the substrate for aligning an optical fiber with said transmitter.

Abstract: A photovoltaic device utilizing compound semiconductor materials that are stable when operated at high temperatures. Hostile environments, and in particular, thermally stressful enviornments such as those generated by use of light concentrating systems, require encapsulation of the device. Sealing of the photo-active junction, the conductive grid, the exposed semiconductor surfaces, and the pads contacting the grid away from the junction area provide such thermal stability. A heterojunction structure can be used along with barrier materials providing a conductive grid in contact with the photo-active surface thereby reducing interdiffusion of that surface with the conductive grid.

Abstract: An improved method of zone-melting and recrystallizing of polysilicon film on an insulator over silicon is described.

Abstract: Microminiature resonant sensor structures are prepared according to micromachining/microfabrication techniques, which structures include thin-film deposits of piezoelectric materials. Such piezoelectric deposits may be excited electrically by including metallized conductive paths during fabrication, or optically. The resonant frequency of the sensor structure is varied by subjecting it to a physical variable, or measurand, such as pressure, temperature, flow rate, etc. Similarly, the resonant frequency of the devices may be detected electrically or optically. The microminiature resonant structures include ribbons and wires, hollow beam and cantilevered hollow beams, and single- and double-ended double beam resonant structures such as tuning forks.