Abstract: The disclosed technology generally relates to lithographically defined conductive lines for integrated circuit devices formed by plating, and more particularly to conductive lines shaped to reduce the magnitude of electric field in the electric field distributions around conductive lines of integrated and monolithic transformers and isolators.

Abstract: A temperature sensor for use in an infrared detector the temperature sensor comprising: a first resistor associated with a first thermal path having a first thermal conductivity between the first resistor and a substrate and a first temperature coefficient of resistance; a second resistor associated with a second thermal path having a second thermal conductivity between the second resistor and the substrate and a second temperature coefficient of resistance, and a measurement circuit responsive to changes in the resistance of the first and second resistors to estimate changes in temperature, and wherein at least one of (a) the first and second thermal conductivities are different or (b) the first and second temperature coefficients of resistance are different.

Abstract: A phase corrector for laser trimming a component, the phase corrector comprising: a first correction structure located to a first side of the component, the first correction structure comprising first and second correction regions at first and second distances from the component; and a second correction structure located to a second side the component, the second correction structure comprising third and fourth correction regions at third and fourth distances from the component.

Abstract: A photonic sensor, comprising: a platform, a temperature sensor on the platform; and a structure formed on or as part of the platform.

Abstract: Methods, devices and electronic components are disclosed, including a method of testing an integrity of a reduced gas pressure region at at least part of an electronic device, the method comprising applying a first current or voltage to a conductor, wherein the conductor includes at least one thermocouple formed on the device, and measuring an electrical property of the device.

Abstract: A silicon substrate is provided that may facilitate the formation of RF components more cheaply by using a silicon layer formed by the Czochralski process, and having a carrier life time killing layer deposited on the silicon layer.

Abstract: A phase corrector for laser trimming a component, the phase corrector comprising: a first correction structure located to a first side of the component, the first correction structure comprising first and second correction regions at first and second distances from the component; and a second correction structure located to a second side the component, the second correction structure comprising third and fourth correction regions at third and fourth distances from the component.

Abstract: An infrared sensor, comprising at least one pixel comprising a first sensor and a second sensor, wherein the first and second sensors are dissimilar.

Abstract: A photonic sensor, comprising: a platform, a temperature sensor on the platform; and a structure formed on or as part of the platform.

Abstract: A temperature sensor for use in an infrared detector the temperature sensor comprising: a first resistor associated with a first thermal path having a first thermal conductivity between the first resistor and a substrate and a first temperature coefficient of resistance; a second resistor associated with a second thermal path having a second thermal conductivity between the second resistor and the substrate and a second temperature coefficient of resistance, and a measurement circuit responsive to changes in the resistance of the first and second resistors to estimate changes in temperature, and wherein at least one of (a) the first and second thermal conductivities are different or (b) the first and second temperature coefficients of resistance are different.

Abstract: An infrared sensor, comprising at least one pixel comprising a first sensor and a second sensor, wherein the first and second sensors are dissimilar.

Abstract: A tunable laser device (1) comprises integrally formed first and second ridge waveguides (5, 6). A longitudinally extending ridge (12) defines first and second light guiding regions (19, 20) of the first and second waveguides (5, 6) A plurality of first and second slots (27, 28) extending laterally in the ridge (12) adjacent the first and second waveguides (5, 6), produce first and second mirror loss spectra of the respective first and second waveguides (5, 6) with minimum peak values at respective first and second wavelength values. The spacing between the second slots (28) is different to that between the first slots (27) so that with one exception the minimum peak values of the first and second mirror loss spectrum occur at different wavelength values. The first and second waveguides (5, 6) are independently pumped with variable currents to selectively vary the common wavelength at which the minimum peak values of the first and second mirror loss spectra occur to produce Vernier tuning of the device.

Abstract: A laser device includes a ridge waveguide having an active layer between upper and lower cladding layers. A ridge formed in the upper cladding layer defines the width of a light guiding region in the active layer, and is formed so that a portion of the light guiding region extends into the ridge. A plurality of reflecting slots extend across and into the ridge to a depth sufficient to extend into the extending portion in order that the reflectivity of each slot is on the order of 2%. The slots intersect more than 20% of the total mode energy in the light guiding region, and this in combination with the gain of the active layer facilitates lasing within the light guiding region independently of the reflectivity of end facets of the waveguide. The laser device is particularly suitable for integrally forming with other optical components on a single semiconductor chip.

Abstract: A laser device (1) comprises a ridge waveguide (2) comprising an upper cladding layer (5) and a lower cladding layer (6), between which is located an active layer (7). A ridge (8) formed in the upper cladding layer (5) defines the lateral width of a light guiding region (9) in the active layer (7). The ridge (8) is formed so that a portion (13) of the light guiding region (9) extends above the active layer (7) into the ridge (8). A plurality of lateral reflecting slots (15) extend laterally across the ridge (8) and extend into the ridge (8) to a depth sufficient to extend into the portion (13) of the light guiding region (9) which extends into the ridge (8) in order that the reflectivity of each lateral slot (15) is in the order of 2%.

Abstract: A tunable laser device (1) comprises integrally formed first and second ridge waveguides (5, 6). A longitudinally extending ridge (12) defines first and second light guiding regions (19, 20) of the first and second waveguides (5, 6) which communicate with each other. A plurality of first slots (27) extending laterally in the ridge (12) adjacent the first waveguide (5), and a plurality of second slots (28) extending laterally in the ridge (12) adjacent the second waveguide (6) produce first and second mirror loss spectra of the respective first and second waveguides (5, 6) with minimum peak values at respective first and second wavelength values.

Abstract: An array of highly efficient micro-LEDs where each micro-LED is an integrated diode structure in a mesa, in which the mesa shape and the light-emitting region are chosen for optimum efficiency. A single one of the micro-LEDs includes, on a substrate and a semiconductor layer, a mesa, a light emitting layer, and an electrical contact. The micro-LEDs in this device have a very high EE because of their shape. Light is generated within the mesa, which is shaped to enhance the escape probability of the light. Very high EEs are achieved, particularly with a near parabolic mesa that has a high aspect ratio. The top of the mesa is truncated above the light-emitted layer (LEL), providing a flat surface for the electronic contact on the top of the semiconductor mesa. It has been found that the efficiency is high, provided the top contact has a good reflectivity value. Also, it has been found that efficiency is particularly high if the contact occupies an area of less than 16% of the truncated top mesa surface area.