Abstract: Disclosed are compounds of Formula 1, including all stereoisomers, N-oxides, and salts thereof, agricultural compositions containing them and their use as herbicides wherein R1, R2, R3, R4, R14, and X are as defined in the disclosure, A is selected from and R12, R13, n, X1, X2, X3, X4, X5, X6, X7, X8, X9, X10, X11, Y and Y1 are as defined in the disclosure.

Abstract: Methods and apparatuses for delivering and retaining solid chemicals in molten salt baths are provided, the chemicals may serve to reduce the lithium poisoning level of the molten salt bath. Methods and apparatuses are also provided for retaining sludge in a molten salt bath, allowing for removal of the sludge from the molten salt bath.

Abstract: A notification apparatus 201 for a cellular communication system 100 comprises a call detector 209 which detects a communication initialization involving a first subscriber 101. A notification processor 211 determines if a communication notification requirement is stored for the first subscriber. If so, the notification processor proceeds to determine a second subscriber 115 associated with the first subscriber and the communication notification requirement. A notification message generator 215 then generates a notification message and transmits this to the second subscriber. The notification message comprises an indication of the communication initialization and may specifically be a text message indicating the nature of the communication and the involved parties.

Abstract: A combined garment and safety harness is disclosed that comprises a garment portion and a harness portion. The garment portion comprises a back torso portion and a front torso portion and has left and right arm openings, left and right leg openings, and a neck opening. Additionally, the harness portion comprises a webbing and an attachment member that are secured to each other. The webbing comprises a plurality of interconnected strap members and forms a closed loop around and adjacent the left leg opening of the garment portion and a separate closed loop around and adjacent the right leg opening. The webbing is secured to the garment portion. At least a portion of harness portion extends through the back torso portion of the garment portion.

Abstract: This invention provides a flag (1), consisting of a flexible membrane (2), a shaft (3) and a distending mechanism comprising resilient rods (4.1) and (4.2). The shaft (3) is hollow and forms a sleeve about a flag staff (7). The flexible membrane (2) has a leading end (5) and a trailing end (6). The leading end (5) is removably attached to the shaft or sleeve (3). Each rod (4.1) and (4.2) has a fixing end and a free end. The fixing ends are frictionally fixed to the sleeve (3) by a collar (8) located on the sleeve, and the free ends are retained in pockets (6.1) and (6.2) provided in the trailing end (6). In use, the rods (4.1) and (4.2) exerts a pressure from within the membrane (2), resulting in the distended state of the flag (1) under all weather conditions.

Abstract: A notification apparatus (201) for a cellular communication system (100) comprises a call detector (209) which detects a communication initialisation involving a first subscriber (101). A notification processor (211) determines if a communication notification requirement is stored for the first subscriber (101). If so, the notification processor (211) proceeds to determine a second subscriber (115) associated with the first subscriber (101) and the communication notification requirement. A notification message generator (215) then generates a notification message and transmits this to the second subscriber (115). The notification message comprises an indication of the communication initialisation and may specifically be a text message indicating the nature of the communication and the involved parties.

Abstract: A method for bonding a pair of silicon wafers (2,3) together to form a semiconductor wafer (1) wherein an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2,3). The method includes subjecting the pretreated interface surface (5) to an initial anneal step at approximately 700° C. for 60 minutes for recrystallising the interface surface, and then subjecting both interface surfaces (4,5) to two cleaning steps with respective first and second cleaning solutions, neither of which contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4,5) are rinsed with water after each cleaning step, and the silicon wafers (2,3) are bonded by anneal bonding at a temperature of the order of 1,150° C. for approximately 60 minutes.

Abstract: A method for bonding a pair of silicon wafers (2, 3) together to form a semiconductor wafer (1) wherein an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2, 3). The method includes subjecting the pretreated interface surface (5) to an initial anneal step at approximately 700° C. for 60 minutes for recrystallising the interface surface, and then subjecting both interface surfaces (4, 5) to two cleaning steps with respective first and second cleaning solutions, neither of which contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4, 5) are rinsed with water after each cleaning step, and the silicon wafers (2, 3) are bonded by anneal bonding at a temperature of the order of 1,150° C. for approximately 60 minutes.

Abstract: A combined garment and safety harness is disclosed that comprises a garment portion and a harness portion. The garment portion comprises a back torso portion and a front torso portion and has left and right arm openings, left and right leg openings, and a neck opening. Additionally, the harness portion comprises a webbing and an attachment member that are secured to each other. The webbing comprises a plurality of interconnected strap members and forms a closed loop around and adjacent the left leg opening of the garment portion and a separate closed loop around and adjacent the right leg opening. The webbing is secured to the garment portion. At least a portion of harness portion extends through the back torso portion of the garment portion.

Abstract: A semiconductor substrate (1) comprising an SOI (2) formed therein. The semiconductor substrate (1) comprises first and second wafers (4,6) which are directly bonded together along a bond interface (9). Prior to bonding the wafers (4,6), a portion (15) of the second wafer (6) is ion implanted to form a p+ region for facilitating selective etching thereof to form a buried cavity (16), in which a buried insulating layer is subsequently formed under a portion (10) of the first wafer (4) for forming the SOI (2). After bonding of the first and second wafers (4,6) a communicating opening (20) is etched through the first wafer (4) to the bond interface (9), and the selectively etchable portion (15) is etched through the communicating opening (20) to form the buried cavity (16). The buried cavity (16) is then filled with deposited oxide to form the buried insulating layer (11).

Abstract: A method for bonding a pair of silicon wafers (2,3) together to form a semiconductor wafer (1) wherein an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2,3). The method includes subjecting the pretreated interface surface (5) to an initial anneal step at approximately 700° C. for 60 minutes for recrystallising the interface surface, and then subjecting both interface surfaces (4,5) to two cleaning steps with respective first and second cleaning solutions, neither of which contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4,5) are rinsed with water after each cleaning step, and the silicon wafers (2,3) are bonded by anneal bonding at a temperature of the order of 1,150° C. for approximately 60 minutes.