Patents by Inventor Paul McIntryre

Paul McIntryre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same
    Patent number: 6320213
    Abstract: A dynamic random access memory device (100) includes storage capacitors using a high dielectric constant material, such as, BaSrTiO3, SrBi2Ta2O9 and PbZrTiO3, for the capacitors' insulator. The device includes a conductive plug (106) formed over and connecting with a semiconductor substrate (102). A buffer layer (107) of titanium silicide lays over the plug, and this layer serves to trap “dangling” bonds and to passivate the underlying surface. A first diffusion barrier layer (108), e.g., titanium aluminum nitride, covers the titanium silicide. A capacitor first electrode (110) lays over the diffusion barrier layer. The high dielectric constant material (112) is laid over the capacitor first electrode. A capacitor second electrode (116) is laid over the high dielectric constant material. A second diffusion barrier layer (120) is deposited on the capacitor second electrode. A conductor, such as aluminum (130), is laid over the second diffusion barrier layer.
    Type: Grant
    Filed: December 19, 1997
    Date of Patent: November 20, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter S. Kirlin, Scott R. Summerfelt, Paul McIntryre