Abstract: A novel tamper-indicating barcode methodology is disclosed that allows for detection of alteration to the barcode. The tamper-indicating methodology makes use of a tamper-indicating means that may be comprised of a particulate indicator, an optical indicator, a deformable substrate, and/or may be an integrated aspect of the barcode itself. This tamper-indicating information provides greater security for the contents of containers sealed with the tamper-indicating barcodes.

Abstract: The invention relates to a multilayer microstructure and a method for preparing thereof. The method involves first applying a first photodefinable composition having a first exposure wavelength on a substrate to form a first polymeric layer. A portion of the first photodefinable composition is then exposed to electromagnetic radiation of the first exposure wavelength to form a first pattern in the first polymeric layer. After exposing the first polymeric layer, a second photodefinable composition having a second exposure wavelength is applied on the first polymeric layer to form a second polymeric layer. A portion of the second photodefinable composition is then exposed to electromagnetic radiation of the second exposure wavelength to form a second pattern in the second polymeric layer. In addition, a portion of each layer is removed according to the patterns to form a multilayer microstructure having a cavity having a shape that corresponds to the portions removed.

Abstract: A novel tamper-indicating barcode methodology is disclosed that allows for detection of alteration to the barcode. The tamper-indicating methodology makes use of a tamper-indicating means that may be comprised of a particulate indicator, an optical indicator, a deformable substrate, and/or may be an integrated aspect of the barcode itself. This tamper-indicating information provides greater security for the contents of containers sealed with the tamper-indicating barcodes.

Abstract: A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.

Abstract: The invention relates to a multilayer microstructure and a method for preparing thereof. The method involves first applying a first photodefinable composition having a first exposure wavelength on a substrate to form a first polymeric layer. A portion of the first photodefinable composition is then exposed to electromagnetic radiation of the first exposure wavelength to form a first pattern in the first polymeric layer. After exposing the first polymeric layer, a second photodefinable composition having a second exposure wavelength is applied on the first polymeric layer to form a second polymeric layer. A portion of the second photodefinable composition is then exposed to electromagnetic radiation of the second exposure wavelength to form a second pattern in the second polymeric layer. In addition, a portion of each layer is removed according to the patterns to form a multilayer microstructure having a cavity having a shape that corresponds to the portions removed.

Abstract: A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.

Abstract: A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.