Patents by Inventor Paul Monnier

Paul Monnier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240102053
    Abstract: Disclosed is a method for producing genetically engineered cells in vitro. The method includes direct injection of a genome editing composition into a cell nucleus of a cell. The genome editing composition includes at least one Cas protein and at least one gRNA molecule to target a distinct genomic location. The injection is performed with a microelectromechanical systems injection chip including a cantilever. The cantilever includes a microchannel being in fluid communication with a nanosyringe, and wherein direct injection includes providing a fluid communication between the microchannel and the nucleus of the cell by insertion of the nanosyringe into the nucleus of the cell and injecting the genome editing composition via the microchannel through the nanosyringe into the nucleus of the cell.
    Type: Application
    Filed: February 4, 2022
    Publication date: March 28, 2024
    Inventors: Tobias A. Beyer, Michael Gabi, Stephan Jud, Matyas Vegh, Maria Mila, Samuel Riedmann, Paul Monnier, Pascal Behr
  • Patent number: 10256604
    Abstract: A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: April 9, 2019
    Assignees: STMicroelectronics (Crolles 2) SAS, Centre National de la Recherche Scientifique, Universite Paris Diderot
    Inventors: Guillaume Crosnier, Fabrice Raineri, Rama Raj, Paul Monnier
  • Publication number: 20180175585
    Abstract: A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).
    Type: Application
    Filed: June 26, 2015
    Publication date: June 21, 2018
    Applicants: STMicroelectronics (Crolles 2) SAS, Centre National de la Recherche Scientifique, Universite Paris Diderot
    Inventors: Guillaume Crosnier, Fabrice Raineri, Rama Raj, Paul Monnier