Abstract: The present invention provides various methods for forming a ground-plane SOI device which comprises at least a field effect transistor formed on a top Si-containing surface of a silicon-on-insulator (SOI) wafer; and an oxide region present beneath the field effect transistor, located in an area between source and drain regions which are formed in said SOI wafer, said oxide region is butted against shallow extensions formed in said SOI wafer, and is laterally adjacent to said source and drain regions.

Abstract: A ground-plane SOI device including at least a gate region that is formed on a top Si-containing layer of a SOI wafer, said top Si-containing layer being formed on a non-planar buried oxide layer, wherein said non-planar buried oxide layer has a thickness beneath the gate region that is thinner than corresponding oxide layers that are formed in regions not beneath said gate region as well as a method of fabricating the same are provided.

Abstract: A system and method for selecting, ordering and distributing customized food products is disclosed. In one embodiment, the method is a computer-implemented method comprising viewing a list of additives for creating a customized food product, selecting one or more additives from the list of additives to create the customized food product, and transmitting a request to purchase the customized food product, which is then distributed to the consumer. By communicating with the manufacturer as to personal needs and desires pertaining to health, activity level, organoleptic preferences and so forth, the consumer can now develop and order a customized food product to suit his or her particular tastes, using a real-time interactive communication link.

Abstract: A screw holder mountable on a drive unit having a tubular passage with two axially-aligned sections, each provided with locking and centering elements, such that a screw inserted into such holder can initially only penetrate until the screw head is reliably held and suspended in the first section by the locking elements. The force of the centering and locking elements upon the screw head is overcome when the apparatus is placed on the screw location and an engagement tool coupled to a drive shaft is brought into driving engagement with the screw head, which driving movement forces the locking elements radially outward in response to the axial load upon the screw head and the passage of the screw head therethrough. After the screw head passes through the first section within the tubular passage, the screw shaft is engaged by the centering elements of the second section. The centering elements of the second section are then also forced back as the head of the screw passes therethrough.

Abstract: A method and structure for forming an integrated circuit chip having at least one opening in a substrate includes forming an opening having vertical walls in the substrate, protecting a first portion of the vertical walls of the opening, leaving a second portion of the vertical walls unprotected, and laterally patterning the second portion of the opening to change a shape or property of the opening.

Abstract: The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone.

Abstract: A method and structure for forming an integrated circuit chip having at least one opening in a substrate includes forming an opening having vertical walls in the substrate, protecting a first portion of the vertical walls of the opening, leaving a second portion of the vertical walls unprotected, and laterally patterning the second portion of the opening to change a shape or property of the opening.

Abstract: A method for forming an interconnect wiring structure, such as a fuse structure, comprises forming an opening in an insulating layer using a phase shift mask (the opening having vertical sidewalls sloped sidewalls and horizontal surfaces), depositing a conductive material in the opening and removing the conductive material from the sloped sidewalls and horizontal surfaces, wherein the conductive material remains on the vertical sidewalls as fuse links.

Abstract: A method for forming an interconnect wiring structure, such as a fuse structure, comprises forming an opening in an insulating layer using a phase shift mask (the opening having vertical sidewalls sloped sidewalls and horizontal surfaces), depositing a conductive material in the opening and removing the conductive material from the sloped sidewalls and horizontal surfaces, wherein the conductive material remains on the vertical sidewalls as fuse links.

Abstract: A method for forming an interconnect wiring structure, such as a fuse structure, comprises forming an opening in an insulating layer using a phase shift mask (the opening having vertical sidewalls sloped sidewalls and horizontal surfaces), depositing a conductive material in the opening and removing the conductive material from the sloped sidewalls and horizontal surfaces, wherein the conductive material remains on the vertical sidewalls as fuse links.

Abstract: In a pulling apparatus for correcting a jaw on a skull, for instance for the elimination of a supraclusion, cross bite or cleft palate, a basic member is provided with elements for attachment to the jaw and is movable in the correcting direction (x1). The basic member is to be movable also in a direction deviating from the correcting direction (x1).

Abstract: Misalignment between two masking steps used in the manufacture of semiconductive devices in a wafer is determined by having a special alignment pattern on each of two masks used in the process and forming images of the masks on the semiconductor devices with the images of the alignment patterns being superimposed over one another to form a Moire pattern. The Moire pattern is compared with other Moire patterns known to correspond to particular amounts of misalignment of the masks to see if it corresponds to an acceptable alignment.

Abstract: A measurement device for in-situ measurement of processing parameters, in accordance with the present invention, includes a semiconductor wafer having at least one processed chip formed thereon. The processed chip further includes at least one sensor for measuring process parameters. A memory storage device for storing the process parameters as the process parameters are measured by the at least one sensor is also included. A timing device is provided for tracking the process parameters as a function of time, and a power supply is included for providing power to the at least one sensor, the memory storage device and the timing device. Also, a method is described for making measurements with the measurement device.

Abstract: The depth at which the top surface of a buried interface is located is non-destructively determined by FTIR.

Abstract: A liquid crystal display projector for projecting images on a screen. The projector includes a projector body and an optical projection system positioned generally within the projector body. A releasable first self-aligning lamp socket for receiving a first end of a longitudinal replaceable bulb and a releasable second self-aligning lamp socket for receiving a second end of a longitudinal replaceable bulb are mounted on a hinged platform coupled to the projector body. The platform has a first position where the platform swings the bulb outside of the projector body and a second position where the platform swings the bulb into an interior position inside the projector body optically aligned with respect to the optical projection system.

Abstract: A method is for the polishing of semiconductor wafers, which are mounted on a front side of a support plate and one side face of which is pressed anst a polishing plate, which is covered with a polishing cloth, with a specific polishing pressure and polished. A device is provided which is suitable for carrying out the method. The method includes a) applying a specific pressure to at least one of a plurality of pressure chambers prior to the polishing of the semiconductor wafers, and b) during the polishing of the semiconductor wafers, transmitting the polishing pressure to a rear side of the support plate via elastic bearing surfaces of the pressure chambers to which pressure has been applied.

Abstract: The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone.

Abstract: A process for monitoring and determining the end point of a wet etch process for removing a thin solid film 116 from a substrate by directing a light beam onto the substrate and monitoring the intensity of reflected beams, including the step of selecting a coherence length of the incoming beam 120 so that it is small enough so that no interference occurs in the liquid layer and large enough so that interference can occur in the thin solid film, i.e., light reflected from the interface between the liquid 118 and the top of the thin film, and light reflected from the interface between the bottom of the thin solid film and the substrate interferes. If the liquid layer is about 100 micrometers thick, and the thin film is about 1 micrometer thick, a coherence length of about 10 micrometers is suitable. Such coherence length can be provided with a suitable bandpass filter.

Abstract: A method for forming a bottle shaped trench 20 in a semiconductor substrate 10 includes reactive ion etching a trench having a tapered top portion 25 in the semiconductor device and continuing to reactive ion etch while increasing the temperature of the semiconductor device to impart a reentrant profile 22 to the trench.

Abstract: In a puller for correcting an upper jaw (19) on a skull (20), for eliminating an overbite, crossbite, or cleft palate for example, a basic body (11) is provided with elements (4, 18, 22) for attachment to upper jaw (19) and is movable in correction direction (x.sub.1).