Abstract: A method for assigning work to a plurality of threads using a primitive data element to partition a work load into a plurality of partitions. A first partition is assigned to a first thread and a second partition is assigned to a second thread of the plurality of threads. A method for improving the concurrency of a multithreaded program by replacing a queue structure storing a plurality of tasks to be performed by a plurality of threads with a partition function. A computer system including a processor unit configured to run a plurality of threads and a system memory coupled to the processor unit that stores a multithreaded program. The multithreaded program workload is partitioned into a plurality of partitions using a primitive data element and a first partition of the plurality of partitions is assigned to a first thread of the plurality of threads for execution.

Abstract: A method for assigning work to a plurality of threads using a primitive data element to partition a work load into a plurality of partitions. A first partition is assigned to a first thread and a second partition is assigned to a second thread of the plurality of threads. A method for improving the concurrency of a multithreaded program by replacing a queue structure storing a plurality of tasks to be performed by a plurality of threads with a partition function. A computer system including a processor unit configured to run a plurality of threads and a system memory coupled to the processor unit that stores a multithreaded program. The multithreaded program workload is partitioned into a plurality of partitions using a primitive data element and a first partition of the plurality of partitions is assigned to a first thread of the plurality of threads for execution.

Abstract: The present invention comprises a method for controlling a threshold voltage through a semiconductor substrate of a first conductivity type (the type being an n- or p- type in a MOSFET) without the need for a blanket implant for either long or short channel devices. A gate structure having opposed lateral edges is formed adjacent a surface of the semiconductor substrate and over a channel region of the substrate. The substrate is rotated around a rotation axis normal to the surface of the substrate to a first rotation position. Ions of a first conductivity type are then implanted into the channel region, using the gate structure as a mask, at an oblique angle relative to the surface normal of the substrate. The substrate is then rotated to a second rotation position approximately 180 degrees from the first rotation position. Ions of the first conductivity type are then implanted into the channel region, using the gate structure as a mask, at the oblique angle relative to the surface of the substrate.