Abstract: A method and apparatus for annealing an integrated ferroelectric device (10) is disclosed in which the device (10) comprises a first layer of material capable of existing in a ferroelectric state and a second layer of material defining an integrated circuit below the first layer such as a microbridge thermal detector. The method comprises producing a pulse of energy, extending the pulse temporally using a pulse extender (200) and illuminating the first layer with the extended pulse. The duration and wavelength and fluence of the extended pulse are selected so that the material of the first layer is annealed into a ferroelectric state without exceeding the temperature budget of the integrated circuit. Application of the method in heating other articles which comprise a layer to be heated and a temperature sensitive layer is also disclosed.

Abstract: A non-mechanical modulating device for use in infrared detection. The device is of particular use in the 8-14 &mgr;m range and has application in thermal imaging cameras and gas sensing systems. The modulator comprises a germanium element and a means of varying the carrier concentration. In particular, the variation of the hole concentration gives rise to the absorption of infrared radiation due to interband transitions between the light and heavy hole bands in the split valence band in germanium. The variation in hole concentration may be initiated in any convenient way, for example, by the irradiation of the germanium with visible or near infrared light, by the electrical injection of free carriers across a germanium diode structure or by electron impact on the germanium surface following acceleration under vacuum. In the case where the variation in carrier concentration is initiated by optical means, the surface of the germanium is treated so as to produce a low surface recombination velocity.