Patents by Inventor Paul P. Wang

Paul P. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Making a short-channel FET
    Patent number: 4294002
    Abstract: An improved Field Effect Transistor (FET) with a very small effective channel length is made by using, a first ion implantation to produce the source and drain regions of the FET and a second very shallow ion implantation next to the source region to produce the effective short channel of the FET. The effective channel of the FET is implanted to only a small fraction of the depth of the source and drain. The use of implantations instead of diffusions in the described manner in combination with the use of the shallow effective channel in the FET provides superior control over the threshold voltage of the FET and increases the operating speed of the FET.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: October 13, 1981
    Assignee: International Business Machines Corp.
    Inventors: Chakrapani G. Jambotkar, Paul P. Wang