Abstract: Embodiments are directed to a low profile key for a keyboard having an overmolded support structure. In one aspect, an embodiment includes a key cap having an illuminable symbol. A support structure having a pair of overmolded wings may pivotally couple to the key cap. A switch housing may surround the support structure and connect each of the first and second wings. A tactile dome may be at least partially positioned within the switch housing and configured to bias the key cap upward. A sensing membrane may be positioned along an underside surface of the tactile dome and configured to trigger a switch event in response to a collapsing of the tactile dome caused by a depression of the key cap. A feature plate may be positioned below the sensing membrane. A light guide panel may define at least one light extraction feature that may be configured to propagate light toward the key cap and cause illumination of the illuminable symbol.

Abstract: A system may include an electronic device such as a head-mounted device and a handheld controller for controlling the electronic device. The handheld controller may have a housing with an elongated shaft extending between first and second tip portions. The handheld controller may have power receiving circuitry configured to receive power from a power source. The power source may be incorporated into an electronic device such as a wireless charging dock or stick, a battery case, or a head-mounted device. The power source may supply power through terminals that form ohmic contacts with mating terminals in the finger device or may transmit power wirelessly using capacitive coupling or inductive charging arrangements. Magnets may be used to hold and align the elongated shaft of the handheld controller on the power source.

Abstract: An improved Field Effect Transistor (FET) with a very small effective channel length is made by using, a first ion implantation to produce the source and drain regions of the FET and a second very shallow ion implantation next to the source region to produce the effective short channel of the FET. The effective channel of the FET is implanted to only a small fraction of the depth of the source and drain. The use of implantations instead of diffusions in the described manner in combination with the use of the shallow effective channel in the FET provides superior control over the threshold voltage of the FET and increases the operating speed of the FET.