Abstract: A device that includes a first integrated device, a second integrated device configured to be electrically coupled to the first integrated device and an electrowetting device configured to be electrically coupled to the second integrated device. The electrowetting device is configured to redistribute heat across a back surface of the device by looping a liquid in the electrowetting device, along the back surface of the device.

Abstract: In a first aspect, a semiconductor device includes a plurality of cells. Each cell of the plurality of cells includes four metal tracks running substantially parallel to each other in a first metal layer to provide signal routing and a plurality of wrapped channels having a pitch that is uniform among the plurality of wrapped channels. In a second aspect, a semiconductor device includes a plurality of cells. Each cell of the plurality of cells includes four metal tracks running substantially parallel to each other in a first metal layer to provide signal routing and a plurality of wrapped channels having an asymmetric distribution. For example, a first distance between a first pair of adjacent wrapped channels is different than a second distance between a second pair of adjacent wrapped channels.

Abstract: Adaptive clocking schemes for synchronized on-chip functional blocks are provided. The clocking schemes enable synchronous clocking which can be adapted according to changes in signal path propagation delay due temperature, process, and voltage variations, for example. In embodiments, the clocking schemes allow for the capacity utilization of a logic path to be increased.

Abstract: A level shifter according to some embodiments is disclosed. In some embodiments, a level shifter includes a middle-of-the-line (MOL) capacitor; and a circuit including at least one thin-film transistor coupled to the MOL capacitor, wherein an input voltage provided to the MOL capacitor is split between the MOL capacitor and the circuit. The MOL capacitor can be formed with a contact strip adjacent to a gate structure. A method of forming a level shifter using thin-oxide technologies includes forming a middle-of-the-line (MOL) capacitor; forming a circuit with one or more thin-film transistors; and coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.

Abstract: Aspects of the disclosure includes a transistor-under-test (TUT) to charge/discharge a capacitor; changing an oscillation state when a capacitor voltage crosses a threshold and turning OFF the TUT; discharging the capacitor using the TUT; commencing precharging the capacitor after detecting the capacitor reaches a transition voltage; commencing discharging the capacitor after a precharger time delay; sustaining a relaxation oscillator waveform, wherein the relaxation oscillator waveform is based on turning OFF/ON the TUT; and generating a digital representation of a TUT current associated with a relaxation oscillator period of the relaxation oscillator waveform.

Abstract: A level shifter according to some embodiments is disclosed. In some embodiments, a level shifter includes a middle-of-the-line (MOL) capacitor; and a circuit including at least one thin-film transistor coupled to the MOL capacitor, wherein an input voltage provided to the MOL capacitor is split between the MOL capacitor and the circuit. The MOL capacitor can be formed with a contact strip adjacent to a gate structure. A method of forming a level shifter using thin-oxide technologies includes forming a middle-of-the-line (MOL) capacitor; forming a circuit with one or more thin-film transistors; and coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.

Abstract: Adaptive clocking schemes for synchronized on-chip functional blocks are provided. The clocking schemes enable synchronous clocking which can be adapted according to changes in signal path propagation delay due temperature, process, and voltage variations, for example. In embodiments, the clocking schemes allow for the capacity utilization of a logic path to be increased.

Abstract: Adaptive clocking schemes for synchronized on-chip functional blocks are provided. The clocking schemes enable synchronous clocking which can be adapted according to changes in signal path propagation delay due temperature, process, and voltage variations, for example. In embodiments, the clocking schemes allow for the capacity utilization of a logic path to be increased.

Abstract: Adaptive clocking schemes for synchronized on-chip functional blocks are provided. The clocking schemes enable synchronous clocking which can be adapted according to changes in signal path propagation delay due temperature, process, and voltage variations, for example. In embodiments, the clocking schemes allow for the capacity utilization of a logic path to be increased.

Abstract: Systems and methods are presented for reducing the impact of high load and aging on processor cores in a processor. A Power Management Unit (PMU) can monitor aging, temperature, and increased load on the processor cores. The PMU instructs the processor to take action such that aging, temperature, and/or increased load are approximately evenly distributed across the processor cores, so that the processor can continue to efficiently process instructions.

Abstract: A particular three-dimensional integrated circuit stack includes a first die including a first bonding interface and a first plurality of interconnect layers arranged according to a first Manhattan wiring scheme. The three-dimensional integrated circuit stack also includes a second die including a second bonding interface and a second plurality of interconnect layers arranged according to a second Manhattan wiring scheme. The first die and the second die stacked with the first bonding interface coupled to the second bonding interface such that the first Manhattan wiring scheme and the second Manhattan wiring scheme are non-Manhattan with respect to each other.

Abstract: Adaptive clocking schemes for synchronized on-chip functional blocks are provided. The clocking schemes enable synchronous clocking which can be adapted according to changes in signal path propagation delay due temperature, process, and voltage variations, for example. In embodiments, the clocking schemes allow for the capacity utilization of a logic path to be increased.

Abstract: Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.

Abstract: An integrated circuit including a first portion of a first cell library including a first plurality of rows, each of the first plurality of rows having a first row height and the first portion having a first portion height, a second portion of a second cell library including a second plurality of rows, each of the second plurality of rows having a second row height and the second portion having a second portion height, wherein the first portion height is equal to the second portion height and the first row height is different from the second row height, and a connector to electrically connect the first portion of the first cell library to the second portion of the second cell library.

Abstract: An integrated circuit cell includes a set of circuit elements associated with a logic function along a logical path between an input and an output of the integrated circuit cell. The set of circuit elements includes a first subset of circuit elements having a first width size and a first threshold voltage and configured to operate within a cycle of time. The set of circuit elements also includes a second subset of circuit elements having a second width size and a second threshold voltage and configured to operate within the cycle of time. The first subset and second subset of circuit elements are configured to toggle data between the input and the output. The second threshold voltage is less than the first threshold voltage when the second width size is less than the first width size.

Abstract: A method of optimizing a layout of an integrated circuit formed using fin-based cells of a standard cell library is provided. The method includes arranging cell rows of different track heights having standard cells. For each cell row, each of the standard cells includes sub-cell rows with sub-cells of one or more types. The sub-cells are interchangeable with one another to modify a device characteristic of the standard cell. The method also includes evaluating the integrated circuit to determine whether a performance metric of the integrated circuit has been satisfied. The method also includes identifying one or more standard cells to modify a device characteristic of the standard cell for satisfying the performance metric of the integrated circuit. The method further includes modifying the one or more standard cells until the performance metric of the integrated circuit is satisfied.

Abstract: A circuit for a low latency, low area, and low power flip-flop may include a pass-gate multiplexer that can selectively allow one of input or test data to enter a master cell when a clock signal is low. The master cell may include a first inverter cross-coupled to a second inverter, and may receive the input or test data and may latch and provide at an input node of the slave cell, an inverted input data or the test data, upon a transition of the clock signal to a high state. The slave cell may include a second clock pass-gate and a third inverter that is cross-coupled to a fourth inverter, and may receive the inverted input data or the test data and may latch and provide at an output node, the input data or the test data, upon the transition of the clock signal to a high state.

Abstract: According to one embodiment, a system for retaining M bits of state data of an integrated circuit during power down includes M serially coupled scan flip flops divided into M/N groups, where the M scan flip flops are able to save/restore the M bits of state data. Each group contains a merged scan flip flop coupled to a series of scan flip flops. The merged scan flip flop in each of the groups is coupled to a respective read port of a memory unit, and a final scan flip flop in each of the groups is coupled to a respective write port of the memory unit. The system enables the memory unit to save the M bits of state data in N clock cycles. Each merged scan flip flop has a read select input that enables restoring of the state data into the M scan flip flops in N clock cycles.

Abstract: A standard cell library for designing integrated circuits is provided. In some aspects, the standard cell library includes a plurality of standard cells having a cell height that is a non-integer multiple of a wiring pitch of routing tracks associated with the standard cell library. The standard cell library further includes a plurality of landing pins for connecting to the routing tracks arranged in the plurality of standard cells, wherein each of the plurality of landing pins is extended by half of the wiring pitch in opposite directions orthogonal to an orientation of the routing tracks.

Abstract: A method of optimizing a layout of an integrated circuit formed using fin-based cells of a standard cell library is provided. The method includes arranging cell rows of different track heights having standard cells. For each cell row, each of the standard cells includes sub-cell rows with sub-cells of one or more types. The sub-cells are interchangeable with one another to modify a device characteristic of the standard cell. The method also includes evaluating the integrated circuit to determine whether a performance metric of the integrated circuit has been satisfied. The method also includes identifying one or more standard cells to modify a device characteristic of the standard cell for satisfying the performance metric of the integrated circuit. The method further includes modifying the one or more standard cells until the performance metric of the integrated circuit is satisfied.