Abstract: An electron microscope assembly suitable for enhancing an image of a lithography tool includes an electron microscope configured for positioning below a lithography stage of an e-beam lithography tool, the lithography stage of the e-beam lithography tool including an aperture for providing the microscope line-of-sight to the lithography optics of the lithography tool, a translation unit configured to selectively translate the microscope along the optical axis of the lithography optics of the lithography tool responsive to a translation control system, the translation unit further configured to position the microscope in an operational state such that the optics of the microscope are positioned proximate to the lithography optics, a docking unit configured to reversibly mechanically couple the microscope with the lithography tool, the microscope configured to magnify a virtual sample plane image generated by the lithography tool.

Abstract: One embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. The apparatus includes a plurality of base electrodes in a two-dimensional array, an insulating border surrounding each base electrode so as to electrically isolate the base electrodes from each other; and a sidewall surrounding each base electrode. The sidewall comprises a plurality of stacked electrodes which are separated by insulating layers. In addition, the base electrodes are advantageously shaped so as to be concave. Furthermore, a conformal coating may be advantageously applied over the base electrodes and sidewalls. Another embodiment relates to an apparatus for reflection electron beam lithography. The apparatus includes a shadow mask configured to form an array of incident electron beamlets. The shadow mask comprises an array of holes which correspond one-to-one with an array of pixel pads of an electron reflective patterned structure.

Abstract: An electron beam apparatus is configured for dark field imaging of a substrate surface. Dark field is defined as an operational mode where the image contrast is sensitive to topographical features on the surface. A source generates a primary electron beam, and scan deflectors are configured to deflect the primary electron beam so as to scan the primary electron beam over the substrate surface whereby secondary and/or backscattered electrons are emitted from the substrate surface, said emitted electrons forming a scattered electron beam. A beam separator is configured to separate the scattered electron beam from the primary electron beam. The apparatus includes a cooperative arrangement which includes at least a ring-like element, a first grid, and a second grid. The ring-like element and the first and second grids each comprises conductive material. A segmented detector assembly is positioned to receive the scattered electron beam after the scattered electron beam passes through the cooperative arrangement.

Abstract: One embodiment disclosed relates to a method of setting a surface charge of an area on a substrate to a desired level. The substrate is held on a stage, and a stage bias voltage applied to the stage is controlled. A flood of electrons is directed to the area. The stage bias voltage is controlled such that the surface charge of the area reaches an equilibrium at the desired level. Another embodiment disclosed relates to a method of auto-focusing a main electron beam incident upon an imaging area of a substrate. A monitor electron beam is generated and directed towards a monitoring area of the substrate at a non-perpendicular incidence angle. An in-focus band in data collected from the monitor beam is detected. The focal length of an objective lens focusing the main beam is adjusted based upon a position of the in-focus band.