Abstract: A method of soldering one or more components to a substrate includes providing a substrate and applying an amount of solder material to the top planar surface of the substrate. One or more electrical components are mounted to the solder material in a predetermined position and orientation. A carrier is provided having one or more magnets embedded therein. The substrate is positioned above the carrier such that each of the one or more magnets is positioned directly below a corresponding electrical component. A carrier cover is positioned above the substrate and the electrical components. The solder material is heated to a predetermined temperature for a predetermined amount of time during which each of the magnets exerts a magnetic force on a corresponding electrical component to maintain its orientation relative to the substrate. The magnets reduce the occurrence of tombstoning of the electrical components during heating of the solder material.

Abstract: A thickness of a signal trace on a printed circuit board (PCB) or a substrate is increased by intentionally forming a solder bridge on a surface of the signal trace during a reflow process in which a flip chip die or other computing component is mounted to the PCB or the substrate. Specifically, adjacent interconnects of the flip chip die are coupled to the same signal trace on the PCB or the substrate. During the reflow process, solder associated with each interconnect flows into a space or area defined by the adjacent interconnects and forms a solder bridge within the space, thereby increasing a thickness of the signal trace.

Abstract: A memory device includes a substrate, a controller die, a flip chip die, first and second silicon dies, and bond wires. The controller and flip chip dies are attached to the substrate using connection balls and in electrical communication with each other. The first and second silicon dies include respective first and second contact pad surfaces. The bond wires electrically connect the contact pad surfaces to the substrate so the first and second silicon dies communicate with the controller die. The flip chip die and first and second silicon dies are NAND dies, the flip chip die is configured as SLC memory, and the silicon dies are configured as one of MLC memory, TLC memory, or QLC memory.

Abstract: A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

Abstract: A flip-chip package and a method for assembling a flip-chip package includes positioning the die on a substrate and introducing an underfill material into a space between the die and the substrate, where a portion of the underfill material extends beyond an edge of the die and forms a fillet that at least partially surrounds the die. The underfill material is cured, and a portion of the fillet is removed to reduce the area of the fillet.

Abstract: A method of soldering one or more components to a substrate includes providing a substrate and applying an amount of solder material to the top planar surface of the substrate. One or more electrical components are mounted to the solder material in a predetermined position and orientation. A carrier is provided having one or more magnets embedded therein. The substrate is positioned above the carrier such that each of the one or more magnets is positioned directly below a corresponding electrical component. A carrier cover is positioned above the substrate and the electrical components. The solder material is heated to a predetermined temperature for a predetermined amount of time during which each of the magnets exerts a magnetic force on a corresponding electrical component to maintain its orientation relative to the substrate. The magnets reduce the occurrence of tombstoning of the electrical components during heating of the solder material.

Abstract: A memory device includes a substrate, a controller die, a flip chip die, first and second silicon dies, and bond wires. The controller and flip chip dies are attached to the substrate using connection balls and in electrical communication with each other. The first and second silicon dies include respective first and second contact pad surfaces. The bond wires electrically connect the contact pad surfaces to the substrate so the first and second silicon dies communicate with the controller die. The flip chip die and first and second silicon dies are NAND dies, the flip chip die is configured as SLC memory, and the silicon dies are configured as one of MLC memory, TLC memory, or QLC memory.

Abstract: A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

Abstract: A flip-chip package and a method for assembling a flip-chip package includes positioning the die on a substrate and introducing an underfill material into a space between the die and the substrate, where a portion of the underfill material extends beyond an edge of the die and forms a fillet that at least partially surrounds the die. The underfill material is cured, and a portion of the fillet is removed to reduce the area of the fillet.